Results 61 to 70 of about 25,268 (194)

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers [PDF]

, 2013
Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays.
Chapnin, V. A., Chizh, K. V., Kalinushkin, V. P., Resnik, V. Ya., Storozhevykh, M. S., Yuryev, V. A.   +5 more
core   +2 more sources

Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes [PDF]

, 2015
Current-voltage (as a function of temperature), capacitance-voltage, and 1/f noise characteristics of Ni/GaN Schottky barrier diodes (SBDs) as function of rapid thermal annealing (RTA) are studied. It is found that RTA treatments of SBDs at 450 °C for 60 
Christiansen, Silke, Kumar, Ashutosh, Kumar, V., Latzel, M., Singh, R.   +4 more
core   +1 more source

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Sensors, 2011
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Farahiyah Mustafa, Abdul Rahim Abdul Rahman   +3 more
doaj   +1 more source

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

Applied Sciences, 2019
Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes.
Rahimah Mohd Saman, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, Mohd Ismahadi Syono   +5 more
doaj   +1 more source

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

IEEE Journal of the Electron Devices Society, 2020
Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates.
Tsung-Han Yang, Houqiang Fu, Kai Fu, Chen Yang, Jossue Montes, Xuanqi Huang, Hong Chen, Jingan Zhou, Xin Qi, Xuguang Deng, Yuji Zhao   +10 more
doaj   +1 more source

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

, 2003
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an ...
Datta, Supriyo, Guo, Jing, Lundstrom, Mark   +2 more
core   +1 more source

Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates

Фізика і хімія твердого тіла, 2016
Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly, A. I. Terletsky, O. B. Fryk   +2 more
doaj   +1 more source

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

, 2018
The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals
Trushin, Maxim
core   +1 more source

Reducing the Barrier Height in Organic Transistors

Advanced Electronic Materials
Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al‐Hashimi, Shubhra Gangopadhyay, Suchismita Guha   +7 more
doaj   +1 more source

Electron Spin Injection at a Schottky Contact

, 2002
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor.
A.F. Isakovic, A.G. Aronov, A.T. Hanbicki, B.T. Jonker, D. L. Smith, D.L. Smith, E.I. Rashba, G. Schmidt, H.J. Zhu, I. Malajovich, J. D. Albrecht, R. Fiederling, S.A. Wolf, Y. Qi   +13 more
core   +1 more source