Results 71 to 80 of about 25,268 (194)

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit

The Innovation
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap.
Jintao Fu, Zhongmin Guo, Changbin Nie, Feiying Sun, Genglin Li, Shuanglong Feng, Xingzhan Wei   +6 more
doaj   +1 more source

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Beilstein Journal of Nanotechnology, 2016
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova   +5 more
doaj   +1 more source

Schottky barrier and contact resistance of InSb nanowire field effect transistors

, 2016
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental ...
Dick, Kimberly A, Fan, Dingxun, Ghalamestani, Sepideh Gorji, Kang, N, Xu, H Q   +4 more
core   +1 more source

Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions

, 2007
We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits temperature dependence ...
E. Sawaguchi, H. Y. Hwang, S. M. Sze, T. Susaki, Y. Kozuka, Y. Tateyama   +5 more
core   +1 more source

Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019
In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga2O3 Schottky barrier diodes. The main idea of this method is based on the
A. Latreche
doaj   +1 more source

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP Advances, 2015
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty, Basanta Roul, Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, K. J. Vinoy, S. B. Krupanidhi   +6 more
doaj   +1 more source

On The Role Of The Interface Charge In Non-Ideal Metal-Semiconductor Contacts

, 2004
The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics.
Ahaitouf, Bardeen, Brown, Bruno Cvikl, Card, Cvikl, Cvikl, Dean Korošak, Doniach, Gomila, Gomila, Hasegawa, Ho, Kane, Korošak, Korošak, Maeda, McEachern, Rhoderick, Sze, Takagi, Tersoff, Tseng, Tseng, Tung, Van Mieghem, Werner, Wu, Wu   +28 more
core   +1 more source

Schottky barrier height engineering on MoS₂ field-effect transistors using a polymer surface modifier on a contact electrode. [PDF]

Discov Nano, 2023
Choi D, Jeon J, Park TE, Ju BK, Lee KY.
europepmc   +1 more source

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study. [PDF]

Sci Rep, 2022
Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW.   +4 more
europepmc   +1 more source

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

, 2010
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap ...
Appenzeller J., Castro E. V., Chen Z., Farmer D. B., Han M. Y., Li X., Mak K. F., McCann E., Min H., Ni Z. H., Novoselov K. S., Novoselov K. S., Ohta T., Oostinga J. B., Pereira V. M., Ritter K. A., Ryzhii V., San-Jose P., Sze S. M., Tonouchi M., Wang F., Wang X., Xia F., Zhang Y., Zhang Y., Zhou S. Y.   +25 more
core   +1 more source