Results 81 to 90 of about 25,268 (194)

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au β-Ga₂O₃ Schottky Barrier Diodes

Micromachines
In this work, the electrical properties of the Ga2O3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β-Ga2O3 surface resulted in ...
Lei Xie, Tao Zhang, Shengrui Xu, Huake Su, Hongchang Tao, Yuan Gao, Xu Liu, Jincheng Zhang, Yue Hao   +8 more
doaj   +1 more source

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study. [PDF]

Sci Rep, 2022
Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW.   +4 more
europepmc   +1 more source

The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact

Materials Research Express
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang, Yapeng Li, Jiqiang Jia, Zhaoyu Luo   +3 more
doaj   +1 more source

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe₂ van der Waals Heterostructures for Excellent Photodetector and NO₂ Gas Sensing Applications. [PDF]

Nanomaterials (Basel), 2022
Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU.   +8 more
europepmc   +1 more source

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel), 2022
Chakraborty S, Kim TW.
europepmc   +1 more source

Hot Electron Magnetotransport in a Spin-Valve Transistor at Finite temperatures

, 2001
The hot electron magnetotransport in a spin-valve transistor has been theoretically explored at finite temperatures. We have explored the parallel and anti-parallel collector current changing the relative spin orientation of the ferromagnetic layers at ...
Aeschlimann, Anil Kumar, Baibich, Crowell, Detavernier, Hong, Hong, Jansen, Jisang Hong, Mizushima, Monsma, Moodera, Sze   +12 more
core   +2 more sources

A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application. [PDF]

Nanomaterials (Basel), 2021
Kaufmann IR, Zerey O, Meyers T, Reker J, Vidor F, Hilleringmann U.   +5 more
europepmc   +1 more source

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

, 2003
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor.
A.F. Isakovic, A.G. Aronov, A.T. Hanbicki, B.T. Jonker, D. L. Smith, D.L. Smith, E.I. Rashba, E.I. Rashba, G. Schmidt, G.L. Bir, H.J. Zhu, J. D. Albrecht, J.D. Albrecht, P.C. van Son, R. Fiederling, R.M. Stroud, V.F. Motsnyi, V.P. Varshni, V.P. Varshni, Z.G. Yu   +19 more
core   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth. [PDF]

Nanoscale Adv, 2023
Menon H, Jeddi H, Morgan NP, Fontcuberta I Morral A, Pettersson H, Borg M.   +5 more
europepmc   +1 more source