Results 151 to 160 of about 1,030 (185)

Large area 4H-SiC power MOSFETs

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002
This paper describes the design and fabrication of 4H-SiC, n-channel Power MOSFETs. For the first time, we have achieved 350 V, 10 A (V/sub F/=4.4 V) devices with an active area of 0.105 cm/sup 2/ (3.3 mm /spl times/3.3 mm). This represents a specific on-resistance of 43 m/spl Omega//spl middot/cm/sup 2/ for a cell pitch of 25 /spl mu/m (160,000 cells ...
A. Agarwal, null Sei-Hyung Ryu, M. Das, L. Lipkin, J. Palmour, N. Saks   +5 more
openaire   +1 more source

Humidity testing of SiC power MOSFETs

2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016
Humidity and outdoor application are a challenge for Silicon (Si) and Silicon Carbide (SiC) applications. This paper investigates the effect of humidity on SiC power MOSFET modules in a real application where no acceleration factors such as pressure or high temperature are applied.
Diane-Perle Sadik, Hans-Peter Nee, Florian Giezendanner, Per Ranstad   +3 more
openaire   +1 more source

Inversion Layer Mobility in SiC MOSFETs

Materials Science Forum, 1998
Lateral MOSFETs (metal oxide semiconductor field effect transistors) were fabricated of 6H-SiC and 4H-SiC using a non-selfaligned technology. A low temperature deposited oxide was used as the gate dielectric. After deposition the oxide was subjected to both inert as well as oxidizing anneals. In this paper, we report the first lateral n-channel MOSFETs
S. Sridevan, B.J. Baliga
openaire   +1 more source

Counter-doped MOSFETs of 4H-SiC

IEEE Electron Device Letters, 1999
In this paper, we investigate the effect of counter-doping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFETs on the channel mobility and the threshold voltage. From this study, we have found that the channel mobility steeply improves as the nitrogen dose increases.
K. Ueno, T. Oikawa
openaire   +1 more source

Channel Doped SiC-MOSFETs

Materials Science Forum, 2000
Shinji Ogino, Tadaaki Oikawa, Katsunori Ueno   +2 more
openaire   +1 more source

Junction temperature estimation of a SiC MOSFET module for 800V high-voltage application in electric vehicles

ETransportation, 2023
Zhibin Shuai
exaly  

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014
B. Hull, S. Allen, Q. Zhang, D. Gajewski, V. Pala, J. Richmond, S. Ryu, M. O'Loughlin, E. Van Brunt, L. Cheng, A. Burk, J. Casady, D. Grider, J. Palmour   +13 more
openaire   +1 more source

Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

IEEE Transactions on Power Electronics, 2021
Wen Yang, yuan yang
exaly  

Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
Xi Jiang, Jun Wang, Zongjian Li
exaly  

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

IEEE Transactions on Power Electronics, 2019
Lei Zhang, Xibo Yuan, Xiaojie Wu
exaly