Results 21 to 30 of about 13,092 (260)

Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset

IEEE Journal of the Electron Devices Society, 2020
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
doaj   +1 more source

Highly Reliable Quadruple-Node Upset-Tolerant D-Latch

IEEE Access, 2022
As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation in ...
Seyedehsomayeh Hatefinasab, Akiko Ohata, Alfonso Salinas, Encarnacion Castillo, Noel Rodriguez   +4 more
doaj   +1 more source

Low-Power Radiation-Hardened Static Random Access Memory with Enhanced Read Stability for Space Applications

Applied Sciences
In space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ...
Hong-Geun Park, Sung-Hun Jo
doaj   +1 more source

Single-event upset simulation and detection in configuration memory

Frontiers in Space Technologies
Single-event upsets (SEUs) from radiation strikes in configuration memory are potentially catastrophic due to their widespread effects. For field-programmable gate arrays (FPGAs), faults in configuration memory propagate into the implemented logic design
Hezekiah Austin, Chris Major, Chris Major, Colter Barney, Justin Williams, Zachary Becker, Mackenzie Smith, Brock LaMeres, Brock LaMeres   +8 more
doaj   +1 more source

Active Radiation-Hardening Strategy in Bulk FinFETs

IEEE Access, 2020
In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that ...
Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz   +3 more
doaj   +1 more source

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

IEEE Access, 2019
This paper presents two novel quadruple cross-coupled memory cell designs, namely QCCM10T and QCCM12T, with protection against single event upsets (SEUs) and double-node upsets (DNUs).
Aibin Yan, Jun Zhou, Yuanjie Hu, Jie Cui, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen   +6 more
doaj   +1 more source

Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node

Applied Sciences, 2022
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash, Zongru Li, Chen Jin, Li Chen, Jiesi Xing, Zhiwu Yang, Shuting Shi   +6 more
doaj   +1 more source

Estimation of SEU Threshold Energy from Kitsat-1 Data Using AP-8 Model [PDF]

Journal of Astronomy and Space Sciences, 2001
KITSAT-1, launched in 1992, passes through Inner Van Allen Radiation Belt in which high energy protons cause single event upsets(SEUs) in the main memory of KITSAT-1 OBC(On-Board Computer)186.
Sung-Joon Kim, Young Hoon Shin, Sung Soo Kim, Kyoung Wook Min   +3 more
doaj  

Stressful Events Reported by Childhood Cancer Survivors and Community Controls From the St. Jude Lifetime (SJLIFE) Cohort: A Mixed Method Study

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Introduction Characterizing stressful events reported by childhood cancer survivors experienced throughout the lifespan may help improve trauma‐informed care relevant to the survivor experience. Methods Participants included 2552 survivors (54% female; 34 years of age) and 469 community controls (62% female; 33 years of age) from the St.
Megan E. Ware, Colter K. Clayton, Fang Wang, Sedigheh Mirzaei, Kyla Shelton, Tara M. Brinkman, Victoria Willard, Katianne M. Howard Sharp, Kevin Krull, Lindsay F. Schwartz, Melissa M. Hudson, Gregory T. Armstrong, Kirsten K. Ness, Rachel T. Webster   +13 more
wiley   +1 more source

Single event upset and mitigation technique in JLTFET based RF mixer

Results in Engineering
This work deals with the study of single event effect (SEE) on RF mixer along with the mitigation technique. A 20 nm independent gate Junctionless Tunnel FET JLTFET (IGJLTFET) was first designed and based on its Id-Vg characteristics; RF mixer circuit ...
Aishwarya K, Lakshmi B
doaj   +1 more source