Results 41 to 50 of about 13,092 (260)

Physical Mechanisms Inducing Electron Single-Event Upset [PDF]

IEEE Transactions on Nuclear Science, 2018
With the increase of sensitivity of devices to single-event upsets (SEUs), the possibility to trigger an upset with incident electrons has been recently raised. All the mechanisms susceptible to trigger the SEUs are investigated in detail. New measurements performed on the field programmable gate array static random access memory based from Xilinx ...
P. Caron, C. Inguimbert, L. Artola, N. Chatry, N. Sukhaseum, R. Ecoffet, F. Bezerra   +6 more
openaire   +1 more source

Efficacy and Tolerability of Topotecan/Cyclophosphamide/Dinutuximab in Relapsed and Refractory High‐Risk Neuroblastoma: A Multi‐Institutional Retrospective Study

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Purpose Chemoimmunotherapy with irinotecan, temozolomide, and dinutuximab (I/T/DIN) has emerged as first‐line therapy for relapsed/refractory (r/r) high‐risk neuroblastoma (HRNB) in North America. Topotecan and cyclophosphamide (T/C) are often used in combination with dinutuximab in the setting of lack of response, progression, or incomplete ...
Benjamin J. Lerman, Madeleine King, Rajen Mody, Sara‐Jane Onyeama, Araz Marachelian, Thomas Cash, Sara M. Federico, Meaghan Granger, Ami V. Desai, Suzanne Shusterman, Jennifer H. Foster, Elizabeth Sokol, Chelsee Greer, Keri Streby, Holly J. Meany, Kieuhoa T. Vo, Margaret E. Macy, Rochelle Bagatell   +17 more
wiley   +1 more source

A low power and soft error resilience guard‐gated Quartro‐based flip‐flop in 45 nm CMOS technology

IET Circuits, Devices and Systems, 2021
Conventional flip‐flops are more vulnerable to particle strikes in a radiation environment. To overcome this disadvantage, in the literature, many radiation‐hardened flip‐flops (FFs) based on techniques like triple modular redundancy, dual interlocked ...
Sabavat Satheesh Kumar, Kumaravel Sundaram, Sanjeevikumar Padmanaban, Jens Bo Holm‐Nielsen, Frede Blaabjerg   +4 more
doaj   +1 more source

A Novel Low-Power and Soft Error Recovery 10T SRAM Cell

Micromachines, 2023
In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors.
Changjun Liu, Hongxia Liu, Jianye Yang
doaj   +1 more source

Molecular Methods for Rare Hemoglobinopathy Cases: First Brazilian Report of Pediatric Siblings with Hb O‐Arab and Alpha‐Thalassemia

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Hemoglobinopathies are prevalent globally; diagnosis is complex in high genetic admixture populations like Brazil. We report, in two pediatric siblings, the first documented cases in Brazil of heterozygosity for hemoglobin (Hb) O‐Arab with coinheritance of α‐thalassemia (αα/−α4.2; −α3.7/−α4.2), resulting in microcytic and hypochromic anemia ...
Elisângela de Souza Miranda Muynarsk, Amanda Cristina Meneguetti Berti, Bárbara Braga Vieira Marques, Victoria Simões Bernardo, Flaviene Felix Torres, Ingrid Souza Dias, Vanessa da Silveira Ramos de Castro, Gabriela Alves Bernardino, Danilo Grünig Humberto da Silva, Edis Belini‐Júnior   +9 more
wiley   +1 more source

A Radiation-Hardened Low-Power SRAM with Enhanced Write Capability for Space Applications

Applied Sciences
With continued scaling of CMOS technology, the critical charge required for state retention in SRAM cells has decreased, leading to increased vulnerability to radiation-induced soft errors such as single-event upsets (SEUs) and single-event multi-node ...
Sang-Jin Kim, Sung-Hun Jo
doaj   +1 more source

Experimental Study on Real-time Measurement of Atmospheric-neutron Induced Single Event Effect Based on High-altitude Area

Yuanzineng kexue jishu, 2022
Based on the test site at the Qinghai Tibet Plateau with an altitude of 4 300 m, atmospheric neutron single event effects of a 65 nm high speed large area static random access memory (SRAM) array were measured in real time.
ZHANG Zhangang;LEI Zhifeng;HUANG Yun;EN Yunfei;ZHANG Yi;TONG Teng;LI Xiaohui;SHI Qian;PENG Chao;HE Yujuan;XIAO Qingzhong;LI Jianke;LU Guoguang
doaj  

Criterion‐Related Validity of the Neuropsychological Quick Assessment for Screening Cognitive, Motor, and Behavioral Impairments in Patients With Pediatric Brain Tumors: An Observational Pilot Study

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Neuropsychological complications may impair the qualitative prognosis of patients with pediatric brain tumors. However, multifaceted evaluations cannot be conducted in all patients because they are time consuming and burdensome for patients.
Ami Tabata, Keita Ueda, Tsukasa Ueno, Katsutsugu Umeda, Kentaro Ueno, Kanade Tanaka, Noyuri Nishida, Rie Yamawaki, Megumi Nukui, Yoshiki Arakawa   +9 more
wiley   +1 more source

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell

IEEE Access
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through technology
Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim   +8 more
doaj   +1 more source

Mitigating bit flips or single event upsets in epilepsy neurostimulators

Epilepsy and Behavior Case Reports, 2016
Objectives: The objective of this study was to review software errors known as single event upsets (SEUs) or bit flips due to cosmic rays in epilepsy neurostimulators. Materials and methods: A case report of a single event upset or bit flip is discussed;
Alice X. Dong, Ryder P. Gwinn, Nicole M. Warner, Lisa M. Caylor, Michael J. Doherty   +4 more
doaj   +1 more source