Combined Time and Information Redundancy for SEU-Tolerance in Energy-Efficient Real-Time Systems
Recently the trade-off between energy consumption and fault-tolerance in real-time systems has been highlighted. These works have focused on dynamic voltage scaling (DVS) to reduce dynamic energy dissipation and on time redundancy to achieve transient ...
Rosinger, Paul +4 more
core
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Ladbury, Raymond +6 more
core
PROMON: a profile monitor of software applications [PDF]
Software techniques can be efficiently used to increase the dependability of safety-critical applications. Many approaches are based on information redundancy to prevent data and code corruption during the software execution.
Di Natale, Giorgio +5 more
core
Atmospheric neutron inducing single event effects on AI chips manufacturing with 8 nm FinFET
--With the rapid advancement of artificial intelligence (AI) chips in diverse applications, single event effects (SEE) caused by high energy particles in ambient environment have emerged as a critical concern.
Yonghong Li +7 more
doaj +1 more source
NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing
This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex ...
Campola, Michael +3 more
core
International audienceThis paper presents experimental characterization of the impact of negative bias temperature instability on the single-event upset sensitivity of SRAM cells embedded in a 65 nm CMOS test vehicle.
Perdu, Philippe +5 more
core +1 more source
A multi-node-upset-resilient 14T SRAM with high read stability for space applications
This paper proposes a voltage-booster read-decoupled radiation-hardened 14T (BDRH14T) SRAM cell. In harsh environments such as space, radiation can flip the stored data in memory cells, resulting in soft errors, including single-event upset (SEU) and ...
Sung-Jun Lim, Sung-Hun Jo
doaj +1 more source
Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc +1 more source
우주용 Shift Register의 Single Event Upset 분석에 관한 연구
학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2013.2, [ vi, 54 p. ]In this paper, an analytic method of radiation effect of the shift register composed of the latch for space applications is presented.
Kang, Geun-Hun, 강근훈
core
Enhancement of Deep Neural Network Recognition on MPSoC with Single Event Upset. [PDF]
Yang W +8 more
europepmc +1 more source

