Results 101 to 110 of about 989 (213)
Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors
This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency.
Irom, Frokh +3 more
core
A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications. [PDF]
Yao R +6 more
europepmc +1 more source
Single Event Mirroring and DRAM Sense Amplifier Designs for Improved Single-Event-Upset Performance
This paper proposes and investigates schemes for hardening the conventional CMOS cross-coupled DRAM sense amplifier to single event upset (SEU). These schemes, adapted from existing SRAM hardening techniques, are intended to harden the dynamic random ...
Lloyd W. Massengill +2 more
core
The Field Programmable Gate Arrays (FPGAs) devices are new technology for military and aerospace applications. Re-programmability feature of these devices allow the user to change the internal configured logic based on new system requirements.
Safarian, Carlo
core
This paper presents a register-transfer-level (RTL) fault injection study of the LEON3 processor’s internal memory subsystem under single-event upsets (SEUs). The analysis targets four key components: the instruction cache (I-cache), data cache (D-cache),
Afef Kchaou, Sehmi Saad, Hatem Garrab
doaj +1 more source
Single event upset studies for the ATLAS SCT and pixel optical links
Optical data transmission has been chosen for the ATLAS Pixel and SemiConductor Tracker to deliver both timing and control information to the detector modules and transmit tracking data to the remote computer room.
Gregor, I M +16 more
core +1 more source
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang +3 more
doaj +1 more source
Investigation of Single Event Upset and Total Ionizing Dose in FeRAM for Medical Electronic Tag
-We investigate the single event upset (SEU) and total ionizing dose (TID) tolerance of FeRAMs fabricated in 180-nm technology against neutron and gamma-ray radiation. Our irradiation tests reveal that the FeRAM has an SEU rate of less than 8.5 10 -3 FIT/
Taiki Uemura, Masanori Hashimoto
core
Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices
International audienceThe sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms have been identified to drive the single-event upset (SEU) sensitivity in the last generation of devices ...
Bezerra, F. +4 more
core +1 more source
Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications
With continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles.
Kon-Woo Kim, Eun Gyo Jeong, Sung-Hun Jo
doaj +1 more source

