Results 101 to 110 of about 989 (213)

Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors

open access: yes, 2004
This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency.
Irom, Frokh   +3 more
core  

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications. [PDF]

open access: yesMicromachines (Basel), 2023
Yao R   +6 more
europepmc   +1 more source

Single Event Mirroring and DRAM Sense Amplifier Designs for Improved Single-Event-Upset Performance

open access: yes, 2007
This paper proposes and investigates schemes for hardening the conventional CMOS cross-coupled DRAM sense amplifier to single event upset (SEU). These schemes, adapted from existing SRAM hardening techniques, are intended to harden the dynamic random ...
Lloyd W. Massengill   +2 more
core  

Single event upset (SEU) detection and correcting system using partial reconfiguration and scrubbing for military and space applications

open access: yes, 2006
The Field Programmable Gate Arrays (FPGAs) devices are new technology for military and aerospace applications. Re-programmability feature of these devices allow the user to change the internal configured logic based on new system requirements.
Safarian, Carlo
core  

Reliability Analysis of the LEON3 Memory Subsystem Under Single-Event Upsets: Cache, AHB Interface, and Memory Controller Vulnerability

open access: yesInformation
This paper presents a register-transfer-level (RTL) fault injection study of the LEON3 processor’s internal memory subsystem under single-event upsets (SEUs). The analysis targets four key components: the instruction cache (I-cache), data cache (D-cache),
Afef Kchaou, Sehmi Saad, Hatem Garrab
doaj   +1 more source

Single event upset studies for the ATLAS SCT and pixel optical links

open access: yes, 2000
Optical data transmission has been chosen for the ATLAS Pixel and SemiConductor Tracker to deliver both timing and control information to the detector modules and transmit tracking data to the remote computer room.
Gregor, I M   +16 more
core   +1 more source

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

open access: yesApplied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang   +3 more
doaj   +1 more source

Investigation of Single Event Upset and Total Ionizing Dose in FeRAM for Medical Electronic Tag

open access: yes, 2020
-We investigate the single event upset (SEU) and total ionizing dose (TID) tolerance of FeRAMs fabricated in 180-nm technology against neutron and gamma-ray radiation. Our irradiation tests reveal that the FeRAM has an SEU rate of less than 8.5 10 -3 FIT/
Taiki Uemura, Masanori Hashimoto
core  

Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

open access: yes, 2018
International audienceThe sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms have been identified to drive the single-event upset (SEU) sensitivity in the last generation of devices ...
Bezerra, F.   +4 more
core   +1 more source

Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications

open access: yesApplied Sciences
With continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles.
Kon-Woo Kim, Eun Gyo Jeong, Sung-Hun Jo
doaj   +1 more source

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