Results 251 to 260 of about 2,945,737 (301)

Single-event effects in avionics

IEEE Transactions on Nuclear Science, 1996
The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEUs are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data.
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Predicting Single Event Effects in DRAM

2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2019
The ability to leverage commodity memory in harsh environments due to radiation has the potential advance computing capability for aerospace and nuclear applications, among others. In this work, we provide the first demonstration of the existence of a small number of weak cells to single event effects for DDR3 memory when exposed to radiation.
Donald Kline, Stephen Longofono, Rami Melhem, Alex K. Jones   +3 more
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Single-event effects on SSD controllers

2017 IEEE International Reliability Physics Symposium (IRPS), 2017
With designers employing FF hardening techniques to mitigate soft errors in complex ASICs, low-cost controller ICs have become one of the most vulnerable parts at the system-level. In this paper, SSD controllers are evaluated for neutron soft error performance to estimate their vulnerability.
B. L. Bhuva, S.-J. Wen, R. Wong, A. Garza   +3 more
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Laboratory tests for single-event effects

IEEE Transactions on Nuclear Science, 1996
Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE's). However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods.
S. Buchner, D. McMorrow, J. Melinger, A.B. Camdbell   +3 more
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Single Event Effects in MEMS Accelerometers

2009 IEEE Radiation Effects Data Workshop, 2009
We present single event effects, induced by heavy ions and protons, on a COTS MEMS accelerometer. The testing procedure is outlined and the contributions from different parts of the accelerometer are discussed.
Coumar Oudea, Patrick Poirot, Remi Gaillard, Christian Poivey, Laurent Marchand   +4 more
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Single-event effects rate prediction

IEEE Transactions on Nuclear Science, 1996
Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results.
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Single Event Effects in NAND Flash Memory Arrays

IEEE Transactions on Nuclear Science, 2005
We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell.
G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami   +4 more
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Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams

IEEE Transactions on Nuclear Science, 1987
Pulsed proton beams can create various upset effects in memory circuits. The response of the IDT 6116RH static RAM to these effects has been investigated over a range of flux extending from a single-event dominated region to a dose-rate dominated region.
M. A. Xapsos, L. W. Massenqill, W. J. Stapor, P. Shapiro, A. B. Campbell, S. E. Kerns, K. W. Fernald, A. R. Knudson   +7 more
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Single Event Displacement Effects in a VLSI

Russian Microelectronics, 2023
The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated.
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Single-Event Effects Test Methods

2019
This chapter presents an overview of main types of single-event effects (SEE), basic characteristics of sensitivity of devices and integrated circuits to SEE and existing standards and guidelines for testing with the use of heavy ion and proton accelerators. Basic requirements for both heavy ion and proton testing will be considered in detail including
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