Results 231 to 240 of about 807,634 (264)

Single Event Effects in MEMS Accelerometers

2009 IEEE Radiation Effects Data Workshop, 2009
We present single event effects, induced by heavy ions and protons, on a COTS MEMS accelerometer. The testing procedure is outlined and the contributions from different parts of the accelerometer are discussed.
Coumar Oudea, Patrick Poirot, Remi Gaillard, Christian Poivey, Laurent Marchand   +4 more
openaire   +1 more source

Laboratory tests for single-event effects

IEEE Transactions on Nuclear Science, 1996
Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE's). However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods.
S. Buchner, D. McMorrow, J. Melinger, A.B. Camdbell   +3 more
openaire   +1 more source

Single photon absorption laser facility for single event effect testing

2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 2016
The laser testing facility for single event effects (SEEs) at the Saskatchewan Structural Sciences Centre, University of Saskatchewan is introduced and its principles of operation described. An ultrafast pulsed laser setup is used to investigate the SEE behavior of microelectronic circuits and devices.
Michael Newton, Brook Danger, Li Chen 0001, Ramaswami Sammynaiken, Haibin Wang, David M. Hiemstra, Valeri Kirischian   +6 more
openaire   +1 more source

Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams

IEEE Transactions on Nuclear Science, 1987
Pulsed proton beams can create various upset effects in memory circuits. The response of the IDT 6116RH static RAM to these effects has been investigated over a range of flux extending from a single-event dominated region to a dose-rate dominated region.
M. A. Xapsos, L. W. Massenqill, W. J. Stapor, P. Shapiro, A. B. Campbell, S. E. Kerns, K. W. Fernald, A. R. Knudson   +7 more
openaire   +1 more source

Single Event Effects in NAND Flash Memory Arrays

IEEE Transactions on Nuclear Science, 2005
We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell.
G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami   +4 more
openaire   +1 more source

Mitigation of Single Event Effects

2016
Mitigation of single event soft errors has taken on growing importance as transistor sizes have decreased. Commercial manufacturers will soon need to address single-event effects as terrestrial radiation sources become a significant source of soft errors in ground-based applications.
openaire   +1 more source

Microbeam studies of single-event effects

IEEE Transactions on Nuclear Science, 1996
The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused
openaire   +1 more source

BRAM implementation of a single-event upset sensor for adaptive single-event effect mitigation in reconfigurable FPGAs

2017 NASA/ESA Conference on Adaptive Hardware and Systems (AHS), 2017
In this paper, we study the performance of a Block RAM (BRAM)-based embedded radiation sensor for adaptive single-event effect mitigation in FPGAs. To achieve this, we designed custom BRAM wrappers to extend the Xilinx BRAM macros with scrubbing and error correction, for both free and used BRAMs (utilized by the user). A case study demonstrates that in
Robért Glein, Philipp Mengs, Florian Rittner, Rainer Wansch, Albert Heuberger   +4 more
openaire   +1 more source

Single-event effects rate prediction

IEEE Transactions on Nuclear Science, 1996
Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results.
openaire   +1 more source

Rate prediction for single event effects-a critique

IEEE Transactions on Nuclear Science, 1992
The authors review various single event effects (SEE) testing and rate prediction methodologies and recommend standard approaches. This discussion is limited to single event upset (SEU) rate prediction for direct-ionization-induced effects. The standard approach being recommended is based partially on a different way of viewing the results of SEU cross-
E.L. Petersen, J.C. Pickel, J.H. Adams, E.C. Smith   +3 more
openaire   +1 more source