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Single Event Effects as a Reliability Issue of IT Infrastructure
Third International Conference on Information Technology and Applications (ICITA'05), 2005Terrestrial neutron is being recognized as a major source of single event effects (SEEs) including soft-error of semi-conductor devices at the ground level. As semiconductor device scaling nose-dives into sub 100nm, the possible threat from single event effects is apparently growing onto IT systems that require a great number of electron devices.
Eishi Ibe +3 more
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Single-Event Effects in STT MRAM
2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021STT MRAM’s greater memory density and inherent radiation tolerance has made it an attractive non-volatile memory option for the space and radiation effects community. Two Single-Event Effects (SEE) in STT MRAM will be discussed, which are bit-flips due to magnetization reversal of the ferromagnetic layers [1] and a negative bit resistance shift caused ...
Douglas Martin +3 more
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Single event transient effects in a voltage reference
Microelectronics Reliability, 2005Abstract The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations.
P. C. Adell +6 more
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Design for mitigation of single event effects
11th IEEE International On-Line Testing Symposium, 2005Various fault tolerant techniques can be employed to mitigate SEUs, SETs and SELs. However, such techniques usually inquire high hardware, speed and power penalty that most commercial applications could not afford. This presentation concerns low cost mitigation techniques for single-event effects induced by alpha particles and atmospheric neutrons in ...
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Single Event Displacement Effects in a VLSI
Russian Microelectronics, 2023The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated.
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Single-event effects on SSD controllers
2017 IEEE International Reliability Physics Symposium (IRPS), 2017With designers employing FF hardening techniques to mitigate soft errors in complex ASICs, low-cost controller ICs have become one of the most vulnerable parts at the system-level. In this paper, SSD controllers are evaluated for neutron soft error performance to estimate their vulnerability.
B. L. Bhuva +3 more
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Single-event effects in micromachined PMOSFETs
ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002Single-event effects in micromachined PMOSFETs in a 2 /spl mu/m standard CMOS process are examined using device simulation. A comparison with the bulk and SOI PMOSFETs with comparable structures is also provided. The effects of N-well depth, angle of incidence, and N-well contact have been investigated in micromachined transistors.
A.A. Osman, M. Mojarradi, K. Mayaram
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Single-event upset effects in optocouplers
IEEE Transactions on Nuclear Science, 1998Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston +4 more
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Single-event effects in avionics
IEEE Transactions on Nuclear Science, 1996The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEUs are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data.
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SINGLE EVENT EFFECTS IN THE NANO ERA
International Journal of High Speed Electronics and Systems, 2008Scaling of complementary metal oxide semiconductor (CMOS) technologies to the sub-100 nm dimension regime increase the sensitivity to pervasive terrestrial radiation. Diminishing levels of charge associated with information in electronic circuits, interactions of multiple transistors due to tight packing densities, and high circuit clock speeds make ...
M. L. ALLES +4 more
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