Results 261 to 270 of about 18,085,785 (304)

SINGLE EVENT EFFECTS IN THE NANO ERA

International Journal of High Speed Electronics and Systems, 2008
Scaling of complementary metal oxide semiconductor (CMOS) technologies to the sub-100 nm dimension regime increase the sensitivity to pervasive terrestrial radiation. Diminishing levels of charge associated with information in electronic circuits, interactions of multiple transistors due to tight packing densities, and high circuit clock speeds make ...
M. L. ALLES, L. W. MASSENGILL, R. D. SCHRIMPF, R. A. WELLER, K. F. GALLOWAY   +4 more
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Single Event Effects in MEMS Accelerometers

2009 IEEE Radiation Effects Data Workshop, 2009
We present single event effects, induced by heavy ions and protons, on a COTS MEMS accelerometer. The testing procedure is outlined and the contributions from different parts of the accelerometer are discussed.
Coumar Oudea, Patrick Poirot, Remi Gaillard, Christian Poivey, Laurent Marchand   +4 more
openaire   +1 more source

Mitigation of Single Event Effects

2016
Mitigation of single event soft errors has taken on growing importance as transistor sizes have decreased. Commercial manufacturers will soon need to address single-event effects as terrestrial radiation sources become a significant source of soft errors in ground-based applications.
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Laboratory tests for single-event effects

IEEE Transactions on Nuclear Science, 1996
Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE's). However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods.
S. Buchner, D. McMorrow, J. Melinger, A.B. Camdbell   +3 more
openaire   +1 more source

Single photon absorption laser facility for single event effect testing

2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 2016
The laser testing facility for single event effects (SEEs) at the Saskatchewan Structural Sciences Centre, University of Saskatchewan is introduced and its principles of operation described. An ultrafast pulsed laser setup is used to investigate the SEE behavior of microelectronic circuits and devices.
Michael Newton, Brook Danger, Li Chen 0001, Ramaswami Sammynaiken, Haibin Wang, David M. Hiemstra, Valeri Kirischian   +6 more
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Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams

IEEE Transactions on Nuclear Science, 1987
Pulsed proton beams can create various upset effects in memory circuits. The response of the IDT 6116RH static RAM to these effects has been investigated over a range of flux extending from a single-event dominated region to a dose-rate dominated region.
M. A. Xapsos, L. W. Massenqill, W. J. Stapor, P. Shapiro, A. B. Campbell, S. E. Kerns, K. W. Fernald, A. R. Knudson   +7 more
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Rate predictions for single-event effects - critique II

IEEE Transactions on Nuclear Science, 2005
The concept of charge efficacy is introduced as a measure of the effectiveness of incident charge for producing single-event upsets. Efficacy is a measure of the single-event upset (SEU) sensitivity within a cell. It is illustrated how the efficacy curve can be determined from standard heavy-ion or pulsed laser SEU cross-section data, and discussed how
Petersen, E., Pouget, Vincent, Massengill, L., Buchner, S., Mcmorrow, D.   +4 more
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The effect of a single recombination event

2005
We investigate the variance in how visible a single recombination event is in a SNP data set as a function of the type of recombination event and its age. Data is simulated under the coalescent with recombination and inference is by the popular composite likelihood methods.
Schierup, Mikkel Heide, Jensen, Thomas Mailund, Wiuf, Carsten   +2 more
openaire   +1 more source

Single Event Effects in NAND Flash Memory Arrays

IEEE Transactions on Nuclear Science, 2005
We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell.
G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami   +4 more
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Microbeam studies of single-event effects

IEEE Transactions on Nuclear Science, 1996
The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused
openaire   +1 more source