Results 251 to 260 of about 18,085,785 (304)

Simulation and mitigation of single event effects

11th IEEE International On-Line Testing Symposium, 2005
This special session includes a presentation on nuclear codes used to determine a data-base of secondary ion species and their energies produced by the neutron-silicon and neutron-oxygen interactions, a presentation on FIT estimation tools using the secondary ions data-base created by the former codes and a presentation on design techniques suitable ...
Lorena Anghel, Michael Nicolaidis
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Single-Event Effects in STT MRAM

2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021
STT MRAM’s greater memory density and inherent radiation tolerance has made it an attractive non-volatile memory option for the space and radiation effects community. Two Single-Event Effects (SEE) in STT MRAM will be discussed, which are bit-flips due to magnetization reversal of the ferromagnetic layers [1] and a negative bit resistance shift caused ...
Douglas Martin, K. Deniz Bozdag, Mark Savage, John Steele   +3 more
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Single Event Effects as a Reliability Issue of IT Infrastructure

Third International Conference on Information Technology and Applications (ICITA'05), 2005
Terrestrial neutron is being recognized as a major source of single event effects (SEEs) including soft-error of semi-conductor devices at the ground level. As semiconductor device scaling nose-dives into sub 100nm, the possible threat from single event effects is apparently growing onto IT systems that require a great number of electron devices.
Eishi Ibe, Hideaki Kameyama, Yasuo Yahagi, Hironaru Yamaguchi   +3 more
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Estimating the effect of single-event upsets on microprocessors

2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014
Evaluating the impact of single-event upsets (SEUs) on complex VLSI circuits in general, and microprocessors in particular, requires an interdisciplinary approach, that includes soft error modeling, accelerated measurements, derating of the raw error rates, and specialized design tools.
Cristian Constantinescu, Srini Krishnamoorthy, Tuyen Nguyen   +2 more
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Single event transient effects in a voltage reference

Microelectronics Reliability, 2005
Abstract The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations.
P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion   +6 more
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Single Event Displacement Effects in a VLSI

Russian Microelectronics, 2023
The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated.
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Single-event effects in micromachined PMOSFETs

ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002
Single-event effects in micromachined PMOSFETs in a 2 /spl mu/m standard CMOS process are examined using device simulation. A comparison with the bulk and SOI PMOSFETs with comparable structures is also provided. The effects of N-well depth, angle of incidence, and N-well contact have been investigated in micromachined transistors.
A.A. Osman, M. Mojarradi, K. Mayaram
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Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
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Single-event effects in avionics

IEEE Transactions on Nuclear Science, 1996
The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEUs are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data.
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Single-event effects on SSD controllers

2017 IEEE International Reliability Physics Symposium (IRPS), 2017
With designers employing FF hardening techniques to mitigate soft errors in complex ASICs, low-cost controller ICs have become one of the most vulnerable parts at the system-level. In this paper, SSD controllers are evaluated for neutron soft error performance to estimate their vulnerability.
B. L. Bhuva, S.-J. Wen, R. Wong, A. Garza   +3 more
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