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Predicting Single Event Effects in DRAM
2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2019The ability to leverage commodity memory in harsh environments due to radiation has the potential advance computing capability for aerospace and nuclear applications, among others. In this work, we provide the first demonstration of the existence of a small number of weak cells to single event effects for DDR3 memory when exposed to radiation.
Donald Kline Jr. +3 more
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Simulation and mitigation of single event effects
11th IEEE International On-Line Testing Symposium, 2005This special session includes a presentation on nuclear codes used to determine a data-base of secondary ion species and their energies produced by the neutron-silicon and neutron-oxygen interactions, a presentation on FIT estimation tools using the secondary ions data-base created by the former codes and a presentation on design techniques suitable ...
Lorena Anghel, Michael Nicolaidis
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Single Event Effects as a Reliability Issue of IT Infrastructure
Third International Conference on Information Technology and Applications (ICITA'05), 2005Terrestrial neutron is being recognized as a major source of single event effects (SEEs) including soft-error of semi-conductor devices at the ground level. As semiconductor device scaling nose-dives into sub 100nm, the possible threat from single event effects is apparently growing onto IT systems that require a great number of electron devices.
Eishi Ibe +3 more
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Estimating the effect of single-event upsets on microprocessors
2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014Evaluating the impact of single-event upsets (SEUs) on complex VLSI circuits in general, and microprocessors in particular, requires an interdisciplinary approach, that includes soft error modeling, accelerated measurements, derating of the raw error rates, and specialized design tools.
Cristian Constantinescu +2 more
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Single-Event Effects in STT MRAM
2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021STT MRAM’s greater memory density and inherent radiation tolerance has made it an attractive non-volatile memory option for the space and radiation effects community. Two Single-Event Effects (SEE) in STT MRAM will be discussed, which are bit-flips due to magnetization reversal of the ferromagnetic layers [1] and a negative bit resistance shift caused ...
Douglas Martin +3 more
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Single event transient effects in a voltage reference
Microelectronics Reliability, 2005Abstract The Single Event Transient response of the LM236 band gap voltage reference from Texas Instruments is analyzed through heavy ion experiments and simulation. The LM236 circuit calibration was performed using generic transistor parameters that were subsequently optimized using device and circuit simulations.
P. C. Adell +6 more
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Single Event Displacement Effects in a VLSI
Russian Microelectronics, 2023The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated.
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Design for mitigation of single event effects
11th IEEE International On-Line Testing Symposium, 2005Various fault tolerant techniques can be employed to mitigate SEUs, SETs and SELs. However, such techniques usually inquire high hardware, speed and power penalty that most commercial applications could not afford. This presentation concerns low cost mitigation techniques for single-event effects induced by alpha particles and atmospheric neutrons in ...
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Single-event effects in micromachined PMOSFETs
ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002Single-event effects in micromachined PMOSFETs in a 2 /spl mu/m standard CMOS process are examined using device simulation. A comparison with the bulk and SOI PMOSFETs with comparable structures is also provided. The effects of N-well depth, angle of incidence, and N-well contact have been investigated in micromachined transistors.
A.A. Osman, M. Mojarradi, K. Mayaram
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Single-event upset effects in optocouplers
IEEE Transactions on Nuclear Science, 1998Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston +4 more
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