Results 121 to 130 of about 13,512 (161)

Laser Simulation of Single Event Upsets

IEEE Transactions on Nuclear Science, 1987
A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a ...
S. P. Buchner, D. Wilson, K. Kang, D. Gill, J. A. Mazer, W. D. Raburn, A. B. Campbell, A. R. Knudson   +7 more
openaire   +1 more source

Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
openaire   +1 more source

Single Event Upsets correlated with environment

IEEE Transactions on Nuclear Science, 1994
Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for ...
A.L. Vampola, M. Lauriente, D.C. Wilkinson, J. Allen, F. Albin   +4 more
openaire   +1 more source

Single-event upset in flash memories

IEEE Transactions on Nuclear Science, 1997
Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the ...
H.R. Schwartz, D.K. Nichols, A.H. Johnston   +2 more
openaire   +1 more source

Formal Methods for Modelling and Analysis of Single-Event Upsets

2015 IEEE International Conference on Information Reuse and Integration, 2015
When a high-energy particle such as a proton strikes a CPU, the impact may result in the corruption of a data register on the CPU. Such a single-event upset (SEU), in which a random bit is flipped in the content of a data register, can lead to critical errors in the execution of a program.
René Rydhof Hansen, Kim Guldstrand Larsen, Mads Chr. Olesen, Erik Ramsgaard Wognsen   +3 more
openaire   +1 more source

Single Event Upsets and Hot Pixels in digital imagers

2015 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS), 2015
From extensive study of digital imager defects, we found that permanent “Hot Pixels” are the main long term digital camera defects, and are caused by high energy cosmic ray particles. Clearly, as in other microelectronic integrated circuits, most of the particles do not induce permanent damage but instead, inject a short term charge that may cause a ...
Glenn H. Chapman, Rahul Thomas, Rohan Thomas, Klinsmann J. Coelho Silva Meneses, Tommy Q. Yang, Israel Koren, Zahava Koren   +6 more
openaire   +1 more source

A Built-in Single Event Upsets Detector for Sequential Cells

Journal of Electronic Testing, 2015
A built-in single event upsets (SEUs) detector is presented in this paper. This detector utilizes charge sharing to detect an SEU in a sequential cell, and the detection process is analyzed through Accuro simulations in a 65 nm technology. The normal operation of this detector would not induce obvious performance degradation of the target circuit ...
Yuanqing Li, Haibin Wang, Lixiang Li 0001, Li Chen 0001, Rui Liu 0011, Mo Chen 0008   +5 more
openaire   +1 more source

On-line characterization and reconfiguration for single event upset variations

2009 15th IEEE International On-Line Testing Symposium, 2009
The amount of physical variation among electronic components on a die is increasing rapidly. There is a need for a better understanding of variations in transient fault susceptibility, and for methods of on-line adaptation to such variations. We address three key research questions in this area.
Kenneth M. Zick, John P. Hayes
openaire   +1 more source

Analysis of single-event upsets in a Microsemi ProAsic3E FPGA

2017 18th IEEE Latin American Test Symposium (LATS), 2017
The desirable use of Field-Programmable Gate Arrays (FPGAs) in aerospace & defense field has become a general consensus among IC and embedded system designers. Radiation-hardened (rad-hard) electronics used in this domain is regulated under severe and complex political and commercial treaties.
Paulo Ricardo Cechelero Villa, Roger C. Goerl, Fabian Vargas 0001, Leticia B. Poehls, Nilberto H. Medina, Nemitala Added, Vitor A. P. de Aguiar, Eduardo L. A. Macchione, Fernando Aguirre, Marcilei Aparecida Guazzelli da Silveira, Eduardo Augusto Bezerra   +10 more
openaire   +1 more source

Accurate Analysis of Single Event Upsets in a Pipelined Microprocessor

Journal of Electronic Testing, 2003
Modern processors embed features such as pipelined execution units and cache memories that can not be directly controlled by programmers through the processor instruction set. As a result, software-based fault injection approaches are even less suitable for assessing the effects of SEUs in modern processors, since they are not able to evaluate the ...
REBAUDENGO, Maurizio, SONZA REORDA, Matteo, VIOLANTE, MASSIMO   +2 more
openaire   +2 more sources