Results 21 to 30 of about 13,695 (259)
Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
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Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
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Highly Reliable Quadruple-Node Upset-Tolerant D-Latch
As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation in ...
Seyedehsomayeh Hatefinasab +4 more
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In space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ...
Hong-Geun Park, Sung-Hun Jo
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Single-event upset simulation and detection in configuration memory
Single-event upsets (SEUs) from radiation strikes in configuration memory are potentially catastrophic due to their widespread effects. For field-programmable gate arrays (FPGAs), faults in configuration memory propagate into the implemented logic design
Hezekiah Austin +8 more
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Active Radiation-Hardening Strategy in Bulk FinFETs
In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that ...
Antonio Calomarde +3 more
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This paper presents two novel quadruple cross-coupled memory cell designs, namely QCCM10T and QCCM12T, with protection against single event upsets (SEUs) and double-node upsets (DNUs).
Aibin Yan +6 more
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Estimation of SEU Threshold Energy from Kitsat-1 Data Using AP-8 Model [PDF]
KITSAT-1, launched in 1992, passes through Inner Van Allen Radiation Belt in which high energy protons cause single event upsets(SEUs) in the main memory of KITSAT-1 OBC(On-Board Computer)186.
Sung-Joon Kim +3 more
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Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash +6 more
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Dynamic Robust Single-Event Upset Simulator
This paper presents the dynamic robust single-event upset simulator, which is a novel framework for fault injection on hardware (via onchip debugging) and simulation testbeds (via the SimicsĀ® full-...
Edward Carlisle, Alan D. George
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