Results 11 to 20 of about 7,404,371 (262)

Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset

Micromachines
Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses
Hongwei Zhang, Yang Guo, Shida Wang, Yi Sun, Bo Mei, Min Tang, Jingyi Liu   +6 more
doaj   +2 more sources

Single-Event Upset Analysis and Protection in High Speed Circuits [PDF]

, 2006
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at
Lofti-Kamran, P., Di Natale, Giorgio, Hosseinabady M., Benso, Alfredo, Lofti Kamran P., Prinetto, Paolo Ernesto, Hosseinabady, M., Di Carlo, Stefano, A. Benso, M. Hosseinabady, P. Lotfi-Kamran, P. Prinetto, G. Di Natale, S. Di Carlo   +13 more
core   +1 more source

Monitor of the single event upsets and linear energy transfer of space radiation on the Beidou navigation satellites

Open Astronomy, 2023
The single event effect caused by space heavy ion radiation is one of the important factors affecting the safety and operation of spacecraft on orbit.
Zhang Binquan, Zhang Shenyi, Shen Guohong, Tuo Changsheng, Zhang Xin, Zhang Huanxin, Quan Lin, Tian Chao, Hou Donghui, Zhou Ping, Ji Wentao   +10 more
doaj   +1 more source

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

Micromachines, 2023
The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE).
Ruxue Yao, Hongliang Lv, Yuming Zhang, Xu Chen, Yutao Zhang, Xingming Liu, Geng Bai   +6 more
doaj   +1 more source

Measurements of Single Event Upset in ATLAS IBL

Journal of Instrumentation, 2020
Published by Inst.
Balbi, G., Barbero, M., Beccherle, R., Bindi, M., Breugnon, P., Butti, P., Cinca, D., Dickinson, J., Ferrere, D., Fougeron, D., Garcia-Sciveres, M., Garcia Pascual, J., Gaudiello, A., Gemme, C., Giangiacomi, N., Hemperek, T., Jeanty, L., Kepka, O., Kocian, M., Lantzsch, K., Liu, P., Martin, C., Mekkaoui, A., Menouni, M., Potamianos, K., Rozanov, A., Takubo, Y., Wensing., M.   +27 more
openaire   +7 more sources

Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers

The Scientific World Journal, 2014
Technology scaling relies on reduced nodal capacitances and lower voltages in order to improve performance and power consumption, resulting in significant increase in layout density, thus making these submicron technologies more susceptible to soft ...
Nor Muzlifah Mahyuddin, Gordon Russell
doaj   +1 more source

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

IEEE Access, 2022
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz   +3 more
doaj   +1 more source

Design and Test of Principle Prototype of Space Single Event Upset Discriminating and Positioning System

Yuanzineng kexue jishu, 2022
Single event upset (SEU) has always been an important factor affecting the reliability of spacecraft electronic equipment, which can cause anomalies in electronic equipment in orbit, and can result in serious spacecraft failure. In order to master signal
ZHAO Zhendong;TAO Wenze;LI Yancun;CHENG Yi;ZHANG Qingxiang;AN Heng;QUAN Xiaoping;ZHANG Chenguang
doaj  

Rule-Based Design for Low-Cost Double-Node Upset Tolerant Self-Recoverable D-Latch

IEEE Access, 2023
This paper presents a low-cost, self-recoverable, double-node upset tolerant latch aiming at nourishing the lack of these devices in the state of the art, especially featuring self-recoverability while maintaining a low-cost profile.
Seyedehsomayeh Hatefinasab, Alfredo Medina-Garcia, Diego P. Morales, Encarnacion Castillo, Noel Rodriguez   +4 more
doaj   +1 more source

Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset

IEEE Journal of the Electron Devices Society, 2020
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
doaj   +1 more source