Results 11 to 20 of about 13,512 (161)
Single Event Upset: An Embedded Tutorial [PDF]
With the continuous downscaling of CMOS technologies, the reliability has become a major bottleneck in the evolution of the next generation systems. Technology trends such as transistor down-sizing, use of new materials, and system on chip architectures continue to increase the sensitivity of systems to soft errors.
Fan Wang, Vishwani D. Agrawal
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In Universe, there are innumeral activities that keep on happening and a lot of effects that are produced as outcomes. One such example is Single Event Upset. SEU is the error generated in the operation performed by a due to the strike between a single ionizing particle like electron, proton or neutron and a sensitive node in micro-electronic device ...
Jilani, Aavesh +2 more
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Single-Event Upsets in Microelectronics [PDF]
AbstractThis article introduces the February 2003 issue of MRS Bulletin on “Single-Event Upsets (SEUs) in Microelectronics.” These radiation effects in devices and circuits have been recognized in recent years as a key reliability concern for many current and future silicon-based technologies.
Henry H.K. Tang, Nils Olsson
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Single event upset reinforcement technology of DICE flip-flop based on layout design
D flip-flop is the basis of timing logic circuit, and SEMU phenomenon tends to be serious with the integrated circuit process size shrinking to nanometer scale.
LAI Xiaoling +4 more
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Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications
Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical
Pavan Kumar Mukku, Rohit Lorenzo
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The single event effect caused by space heavy ion radiation is one of the important factors affecting the safety and operation of spacecraft on orbit.
Zhang Binquan +10 more
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A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications
The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE).
Ruxue Yao +6 more
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Measurements of Single Event Upset in ATLAS IBL
Published by Inst.
Balbi, G. +27 more
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This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde +3 more
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Single event upset (SEU) has always been an important factor affecting the reliability of spacecraft electronic equipment, which can cause anomalies in electronic equipment in orbit, and can result in serious spacecraft failure. In order to master signal
ZHAO Zhendong;TAO Wenze;LI Yancun;CHENG Yi;ZHANG Qingxiang;AN Heng;QUAN Xiaoping;ZHANG Chenguang
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