Results 41 to 50 of about 312,838 (207)

A Radiation-Hardened Low-Power SRAM with Enhanced Write Capability for Space Applications

open access: yesApplied Sciences
With continued scaling of CMOS technology, the critical charge required for state retention in SRAM cells has decreased, leading to increased vulnerability to radiation-induced soft errors such as single-event upsets (SEUs) and single-event multi-node ...
Sang-Jin Kim, Sung-Hun Jo
doaj   +1 more source

Experimental Study on Real-time Measurement of Atmospheric-neutron Induced Single Event Effect Based on High-altitude Area

open access: yesYuanzineng kexue jishu, 2022
Based on the test site at the Qinghai Tibet Plateau with an altitude of 4 300 m, atmospheric neutron single event effects of a 65 nm high speed large area static random access memory (SRAM) array were measured in real time.
ZHANG Zhangang;LEI Zhifeng;HUANG Yun;EN Yunfei;ZHANG Yi;TONG Teng;LI Xiaohui;SHI Qian;PENG Chao;HE Yujuan;XIAO Qingzhong;LI Jianke;LU Guoguang
doaj  

Influence of nuclear de-excitation on observables relevant for space exploration [PDF]

open access: yes, 2010
The composition of the space radiation environment inside spacecrafts is modified by the interaction with shielding material, with equipment and even with the astronauts' bodies.
Alain Boudard   +19 more
core   +1 more source

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell

open access: yesIEEE Access
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through technology
Minji Bang   +8 more
doaj   +1 more source

Mitigating bit flips or single event upsets in epilepsy neurostimulators

open access: yesEpilepsy and Behavior Case Reports, 2016
Objectives: The objective of this study was to review software errors known as single event upsets (SEUs) or bit flips due to cosmic rays in epilepsy neurostimulators. Materials and methods: A case report of a single event upset or bit flip is discussed;
Alice X. Dong   +4 more
doaj   +1 more source

Accelerator simulation test technology and its application for single event effect evaluation in space

open access: yesHe jishu, 2023
BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming   +9 more
doaj   +1 more source

Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature

open access: yesSensors, 2018
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola   +9 more
doaj   +1 more source

Mutual interference induced by single event effects in CMOS circuits

open access: yesAIP Advances, 2020
Single event effect (SEE) induced mutual interference in CMOS circuits, including single event (SE) induced coupling effects (crosstalk) and modulation in local supply voltage on power-supply rails, was studied based on the increase in metal interconnect
Lili Ding   +5 more
doaj   +1 more source

Effects of space radiation on electronic microcircuits [PDF]

open access: yes
The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined.
Kolasinski, W. A.
core   +1 more source

Overview of software tools for modeling single event upsets in microelectronic devices

open access: yesБезопасность информационных технологий, 2016
The paper presents the results of the analysis of existing simulation tools for evaluation of single event upset susceptibility of microelectronic devices with deep sub-micron feature sizes. This simulation tools are meant to replace obsolete approach to
Anatoly Alexandrovich Smolin
doaj  

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