Results 21 to 30 of about 260 (218)
Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications
With continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles.
Kon-Woo Kim, Eun Gyo Jeong, Sung-Hun Jo
doaj +1 more source
Designing fault resilient storage components is a significant challenge in radiation-hardened systems, as CMOS scaling causes systems to be more susceptible to radiation-induced Multiple-Node Upsets (MNUs). The proposed Triple input-Dual output C-element-
Shaik Asiya, Rajeev Pankaj Nelapati
doaj +1 more source
As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur ...
Se-Yeon Park, Eun Gyo Jeong, Sung-Hun Jo
doaj +1 more source
Dynamic Robust Single-Event Upset Simulator
This paper presents the dynamic robust single-event upset simulator, which is a novel framework for fault injection on hardware (via onchip debugging) and simulation testbeds (via the Simics® full-...
Edward Carlisle, Alan D. George
openaire +1 more source
ABSTRACT Background Children with sickle cell disease (SCD) face multiple acute and chronic medical complications that may impact their quality of life as reported by patients themselves. Health‐related social needs (HRSNs), such as food and housing insecurity, are common in people with SCD, but the association between HRSNs and patient‐reported ...
Sarah J. Marks +5 more
wiley +1 more source
Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
doaj +1 more source
A Machine Learning Approach to Predicting Single Event Upsets
A single event upset (SEU) is a critical soft error that occurs in semiconductor devices on exposure to ionising particles from space environments. SEUs cause bit flips in the memory component of semiconductors. This creates a multitude of safety hazards as stored information becomes less reliable.
Archit Gupta +4 more
openaire +2 more sources
ABSTRACT Background Fertility preservation (FP) is increasingly integrated into the care of pediatric patients exposed to gonadotoxic therapy or conditioning for hematopoietic stem cell transplantation (HSCT), yet perioperative data in infants and toddlers remain scarce.
Kerstin Saalabian +13 more
wiley +1 more source
Bit Upset of 25 nm NAND Flash Memory Induced by Heavy Ion Irradiation
In order to investigate the influence of heavy ion fluence on single event upsets (SEU) and the SEU cross-section in NAND Flash memory, as well as the multiple-cell upsets (MCU) due to heavy ion irradiation, experimental studies were performed on two ...
SHENG Jiangkun1,2;XU Peng1,*;QIU Mengtong2;DING Lili2;LUO Yinhong2;YAO Zhibin2;ZHANG Fengqi2;GOU Shilong2;WANG Zujun2
doaj +1 more source
ABSTRACT Background Cerebellar ataxia after pediatric brain tumor treatment can cause persistent gait, balance, and speech impairment, yet no established rehabilitation strategy exists. Somato‐cognitive coordination therapy (SCCT) is a virtual reality–guided intervention designed to promote sensorimotor integration through visually constrained reaching
Masanobu Takeuchi +10 more
wiley +1 more source

