Results 21 to 30 of about 1,246 (262)

Design of Static Random-Access Memory Cell for Fault Tolerant Digital System

Applied Sciences, 2022
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
doaj   +1 more source

Energy-Efficient Dual-Node-Upset-Recoverable 12T SRAM for Low-Power Aerospace Applications

IEEE Access, 2023
With technology scaling, transistor sizing as well as the distance between them, is decreasing rapidly, thereby reducing the critical charge of sensitive nodes. This reduction makes SRAM cells used for aerospace applications more susceptible to radiation
Soumitra Pal, Gajendranath Chowdary, Wing-Hung Ki, Chi-Ying Tsui   +3 more
doaj   +1 more source

Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications

Applied Sciences
With continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles.
Kon-Woo Kim, Eun Gyo Jeong, Sung-Hun Jo
doaj   +1 more source

A Machine Learning Approach to Predicting Single Event Upsets

CoRR, 2023
A single event upset (SEU) is a critical soft error that occurs in semiconductor devices on exposure to ionising particles from space environments. SEUs cause bit flips in the memory component of semiconductors. This creates a multitude of safety hazards as stored information becomes less reliable.
Archit Gupta, Chong Yock Eng, Deon Lim Meng Wee, Rashna Analia Ahmed, See Min Sim   +4 more
openaire   +2 more sources

Design and Analysis of Self Recoverable Triple Node Upset Hardened Latch With Novel Triple Input-Dual Output C-Element for Aerospace Applications

IEEE Access
Designing fault resilient storage components is a significant challenge in radiation-hardened systems, as CMOS scaling causes systems to be more susceptible to radiation-induced Multiple-Node Upsets (MNUs). The proposed Triple input-Dual output C-element-
Shaik Asiya, Rajeev Pankaj Nelapati
doaj   +1 more source

Dynamic Robust Single-Event Upset Simulator

Journal of Aerospace Information Systems, 2018
This paper presents the dynamic robust single-event upset simulator, which is a novel framework for fault injection on hardware (via onchip debugging) and simulation testbeds (via the Simics® full-...
Edward Carlisle, Alan D. George
openaire   +1 more source

Health‐Related Quality of Life and Symptom Severity Among Patients With PIK3CA‐Related Overgrowth Spectrum: A Mixed‐Methods Study to Understand Real‐World Experience With Alpelisib Treatment

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background PIK3CA‐related overgrowth spectrum (PROS) includes several rare overgrowth disorders resulting from somatic gain‐of‐function mutations in PIK3CA. Despite treatment advances, including the recent approval of alpelisib for PROS in the United States, literature detailing the patient experience with PROS is limited.
Vamsi Bollu, Kaitlin LaGasse, Cory D. Saucier, Kimberly Raymond, Miranda Lauher‐Charest, Lauren Crowder, Beilei Cai, Mary Lisha Paul, Denise Adams   +8 more
wiley   +1 more source

Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications

Journal of Low Power Electronics and Applications, 2019
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
doaj   +1 more source

Clinical and Biological Features of Response in Resistant Neuroblastoma to 131I‐Metaiodobenzylguanidine Radiotherapy in the Anti‐GD2 Immunotherapy Era

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background 131I‐metaiodobenzylguanidine (131I‐MIBG) radiotherapy is a key treatment for relapsed and refractory (R/R) neuroblastoma (NB). Patients with R/R disease treated in the modern era are increasingly exposed to anti‐GD2 immunotherapy, which exerts selective pressure and may modify both tumor cell state and microenvironment.
Benjamin J. Lerman, Katherine K. Matthay, Fabienne Hollinger, Catriona Black, Ann A. Lazar, Miguel Pampaloni, Steven G. DuBois, Kieuhoa T. Vo   +7 more
wiley   +1 more source

Bit Upset of 25 nm NAND Flash Memory Induced by Heavy Ion Irradiation

Yuanzineng kexue jishu, 2023
In order to investigate the influence of heavy ion fluence on single event upsets (SEU) and the SEU cross-section in NAND Flash memory, as well as the multiple-cell upsets (MCU) due to heavy ion irradiation, experimental studies were performed on two ...
SHENG Jiangkun1,2;XU Peng1,*;QIU Mengtong2;DING Lili2;LUO Yinhong2;YAO Zhibin2;ZHANG Fengqi2;GOU Shilong2;WANG Zujun2
doaj   +1 more source