Results 21 to 30 of about 7,396,207 (304)
Formal Verification of Fault-Tolerant Hardware Designs
IEEE Access, 2023 Digital circuits for space applications can suffer from operation failures due to radiation effects. Error detection and mitigation techniques are widely accepted solutions to improve dependability of digital circuits under Single Event Upsets (SEUs) and
Luis Entrena +6 more
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Modeling Application-Level Soft Error Effects for Single-Event Multi-Bit Upsets
IEEE Access, 2019 Transient errors induced by radiations cause bit-flips in flip-flops (flip-flop soft errors). Modeling the error resilience level of a target system for flip-flop soft errors is a crucial step to achieve a cost-effective error resilience solution.
Hyungmin Cho, Kon-Woo Kwon
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IEEE Access, 2022 SRAM cells are widely used to design memory blocks of, e.g., caches, register files, and translation lookaside buffers. Depending on the SRAM application, the design requirements are different.
Azam Seyedi +2 more
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Single-event upsets in the Cluster and Double Star Digital Wave Processor instruments [PDF]
, 2014 Radiation-induced upsets are an important issue for electronic circuits operating in space. Upsets due to solar protons, trapped protons, and galactic cosmic rays are frequently observed.
Balikhin, M., Yearby, K.H., Walker, S.N.
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Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
Applied Sciences, 2022 This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied.
Taehwan Yoon, Jihwan Park, Hanwool Jeong
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Single Event Upsets Under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode [PDF]
, 2020 International audienceA sensitivity characterization of a Xilinx Artix-7 field programmable gate array (FPGA) against 14.2-MeV neutrons is presented. The content of the internal static random access memories (SRAMs) and flip-flops was downloaded in a PC ...
Franco Peláez, Francisco Javier +13 more
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Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications
Applied SciencesWith continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles.
Kon-Woo Kim, Eun Gyo Jeong, Sung-Hun Jo
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Energy-Efficient Dual-Node-Upset-Recoverable 12T SRAM for Low-Power Aerospace Applications
IEEE Access, 2023 With technology scaling, transistor sizing as well as the distance between them, is decreasing rapidly, thereby reducing the critical charge of sensitive nodes. This reduction makes SRAM cells used for aerospace applications more susceptible to radiation
Soumitra Pal +3 more
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IEEE AccessDesigning fault resilient storage components is a significant challenge in radiation-hardened systems, as CMOS scaling causes systems to be more susceptible to radiation-induced Multiple-Node Upsets (MNUs). The proposed Triple input-Dual output C-element-
Shaik Asiya, Rajeev Pankaj Nelapati
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A Markovian Statistical Analysis of Single-Event Upsets on Closed-Loop Flight Control Systems [PDF]
, 2006 The operation of aircrafts depend heavily on closed-loop digital flight control systems which can be disrupted or upset by errant neutrons at aircraft flight altitudes.
Lakdawaia, Anushka Vishnukumar
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