Results 11 to 20 of about 1,247 (195)
Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Adv MaterHfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zhou Z +9 more
europepmc +2 more sources
Graphene antidot nanoribbon tunnel field‐effect transistor
Micro & Nano Letters, 2022 A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj +1 more source
IEEE Access, 2020 A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS ...
Jang Woo Lee, Woo Young Choi
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Discover Nano, 2023 This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel
Dariush Madadi, Saeed Mohammadi
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Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
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Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design [PDF]
Semiconductor Science and Technology, 2019 In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area.
Ahmed Shaker +4 more
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Dependency of Tunneling Field-Effect Transistor(TFET) Characteristics on Operation Regions [PDF]
JSTS:Journal of Semiconductor Technology and Science, 2011 In this paper, two competing mechanisms determining drain current of tunneling field-effect transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based on the results, the characteristics of TFETs have been discussed in the tunneling-dominant and drift- dominant region.
Min-Jin Lee, Woo-Young Choi
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In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
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A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications [PDF]
, 2016 This paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better behavior in the process of ...
Moll Echeto, Francisco de Borja +2 more
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Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
IEEE Journal of the Electron Devices Society, 2020 This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
doaj +1 more source