Results 151 to 160 of about 1,247 (194)

The 1T photo pixel cell using the tunneling field effect transistor (TFET)

Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005., 2005
The tunneling field effect transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device.
T. Nirschl, A. Bargagli-Stoffi, J. Fischer, S. Henzler, null Peng-Fei Wang, M. Sterkel, W. Hansch, D. Schmitt-Landsiedel   +7 more
openaire   +1 more source

The impact of scaled channel length in tunneling field effect transistors (TFETs)

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014
In this paper, we investigate the channel length (L CH ) of the silicon-on-insulator (SOI) n-type tunneling field effect transistor (NTFET) with the respect of device performance. 2D-device simulation was used for simulating the devices with 30 nm gate length of SOI NTFET with 10 nm thin buried oxide (t BOX ) and 7 nm thin silicon body (t si ).
Nurul Huda Abdul Rahman, M. K. Md Arshad, Noraini Othman, M.F.M. Fathil, M.S. Nur Humaira, U. Hashim   +5 more
openaire   +1 more source

Analysis of Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET)

2015 Annual IEEE India Conference (INDICON), 2015
In this paper, a Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET) has been investigated. This work is based on the simulation study done using Sentaurus. The electrical characteristics such as surface potential, energy band, electric field and drain current of the CG-JL-TFET) has been studied. The impact of different gate oxide
null Ajay, Mridula Gupta, Rakhi Narang, Manoj Saxena   +3 more
openaire   +1 more source

Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)

Solid-State Electronics, 2020
Abstract A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed. The introduction of the source depletion to the gate-normal TFETs leads to negative differential transconductance.
Jang Woo Lee, Woo Young Choi
openaire   +1 more source

Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)

Solid-State Electronics, 2016
Abstract The influence of gate dielectric constant variation on tunnel field-effect transistors (TFETs) has been investigated. High- κ materials in polycrystalline nature induce localized gate dielectric constant variation. According to the simulation results, TFETs show larger standard deviation of threshold voltage ( V th ), subthreshold swing ...
Seung Kyu Kim, Woo Young Choi
openaire   +1 more source

Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)

72nd Device Research Conference, 2014
The single particle model has been developed for the tunneling between two monolayer two-dimensional (2D) semiconductors [1]. Based on this model, a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) (see Fig.1a) is proposed to achieve very steep subthreshold swing [1].
M. O. Li, ESSENI, David, D. Jena, G. H. Xing   +3 more
openaire   +2 more sources

Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

2009 10th International Conference on Ultimate Integration of Silicon, 2009
The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-“kT/q” swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose
C. Le Royer, F. Mayer
openaire   +1 more source

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

Solid-State Electronics, 2018
Abstract Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation.
Sihyun Kim, Dae Woong Kwon, Euyhwan Park, Junil Lee, Roongbin Lee, Jong-Ho Lee, Byung-Gook Park   +6 more
openaire   +1 more source

Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage for Biosensing Applications

2014
In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when ...
Ajay Singh, Rakhi Narang, Manoj Saxena, Mridula Gupta   +3 more
openaire   +1 more source

Switching Characteristic Analysis of Tunnel Field-Effect Transistor (TFET) Inverters

Journal of Nanoscience and Nanotechnology, 2017
Dae Woong Kwon, Jang Hyun Kim, Euyhwan Park, Junil Lee, Sangwan Kim, Byung-Gook Park   +5 more
openaire   +1 more source