Results 191 to 200 of about 8,273 (227)

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Solid-State Electronics, 2009
Abstract In the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200 V–300 A from Mitsubishi. Secondly, the phenomenon is analysed thanks to simple solid state devices equations.
Lefranc, Pierre, Planson, Dominique, Morel, Hervé, Bergogne, Dominique   +3 more
openaire   +3 more sources

Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules

High Temperatures-High Pressures
The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips
Kelvin Chen, Robson F. S. Dias, Fernando P. Duda, Carolina P. Naveira-Cotta, Christopher P. Tostado, Rodrigo P. M. Moreira, Philippe R. d’Egmont   +6 more
openaire   +1 more source

Experimental-theoretical thermal and electrical analyses of insulated gate bipolar transistors (IGBT) power module

2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2017
Applications of high-power insulated gate bipolar transistor (IGBT) modules include railway traction, motor drives, and hybrid electric vehicles. The reliability of these semiconductor devices is tightly linked to the operating junction temperatures of IGBT and diode chips present in them.
Philippe R. d'Egmont, Carolina P. Naveira-Cotta, Robson F. S. Dias, Christopher P. Tostado, Fernando P. Duda, Kelvin Chen   +5 more
openaire   +1 more source

Improvement of the Safe Operating Area for P-Channel Insulated-Gate Bipolar Transistors (IGBTs)

Japanese Journal of Applied Physics, 1991
A p-channel insulated-gate bipolar transistor (IGBT), which is supposed to be useful for many applications especially for inverters, is developed. The SOA (safe operating area) of p-channel IGBTs is narrower than that of n-channel IGBTs because of the positive-feedback mechanism between a high rate of the avalanche multiplication of electrons and ...
Katsunori Ueno, Yasuyuki Hoshi, Noriyuki Iwamuro, Naoki Kumagai Naoki Kumagai, Osamu Hashimoto Osamu Hashimoto   +4 more
openaire   +1 more source

Simulation of transient turn-off characteristics of a trench emitter insulated gate bipolar transistor (IGBT)

Proceedings of International Conference on Microelectronics, 2002
The modelling of transient turn-off characteristics in an IGBT structure is presented. The semiconductor equations are solved in two dimensions with physical effects such as carrier-carrier scattering mobility and SRH and Auger recombination included. The I-V characteristics, turn-off behaviour and hole concentration have been investigated.
L. Sabesan, P. Mawby, M.S. Towers, K. Board, P. Waind   +4 more
openaire   +1 more source

Evaluation of Robust Covariance Estimation Techniques for Anomaly Detection of Insulated Gate Bipolar Transistors (IGBT)

ASME 2010 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, Volume 2, 2010
An approach to detect anomalies in IGBTs is to monitor the collector-emitter current and voltage in application. These current and voltage parameters can then be reduced to a univariate distance measure called the Mahalanobis Distance (MD). The MD values with the use of an appropriate threshold enable anomaly detection of these devices.
Nishad Patil, Sandeep Menon, Diganta Das, Michael Pecht   +3 more
openaire   +1 more source

Series connection of insulated gate bipolar transistors (IGBTs)

2005 European Conference on Power Electronics and Applications, 2005
R. Withanage, N. Shammas, S. Tennakoon
openaire   +1 more source

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

2014
Master of ...
openaire   +1 more source

High Power Insulated Gate Bipolar Transistors (IGBTs)

Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988
H. Ohashi, A. Nakagawa, M. Hideshima
openaire   +1 more source

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

2015
Abstract : A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.
openaire   +1 more source