Results 151 to 160 of about 10,786 (185)

Magnetic Random Access Memory (MRAM)

Journal of Nanoscience and Nanotechnology, 2007
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading ...
Yuankai, Zheng, Yihong, Wu, Kebin, Lil, Jinjun, Qiu, Guchang, Han, Zaibing, Guo, Ping, Luo, Lihua, An, Zhiyong, Liu, Li, Wang, Seng Ghee, Tan, Baoyu, Zong, Bo, Liu   +12 more
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Reliability of 4MBIT MRAM

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005
Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM) reliability were available in the literature. In this paper, we present additional reliability data taken in full 4 Mb MRAM arrays, significantly extending the scope of our original study.
J. Akerman, P. Brown, D. Gajewski, M. Griswold, J. Janesky, M. Martin, H. Mekonnen, J.J. Nahas, S. Pietambaram, J.M. Slaughter, S. Tehrani   +10 more
openaire   +1 more source

Probabilistically Programmed STT-MRAM

IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012
Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu, Xiaochun Zhu, Seung Kang, Kendrick Yuen, Rob Gilmore   +4 more
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Windowed MRAM sensing scheme

Records of the IEEE International Workshop on Memory Technology, Design and Testing, 2002
Memories using any type of on-chip magnetic memory elements (often known as MRAM) sometimes suffer from unstable magnetic domains within the memory bits. These states may occur because of improper bit manufacturing techniques or transient magnetic fields generated on or off chip.
R. Zhang, W.C. Black, M.M. Hassoun
openaire   +1 more source

Design considerations for MRAM

IBM Journal of Research and Development, 2006
MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations.
T. M. Maffitt, J. K. DeBrosse, J. A. Gabric, E. T. Gow, M. C. Lamorey, J. S. Parenteau, D. R. Willmott, M. A. Wood, W. J. Gallagher   +8 more
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Radiation effects on MRAM

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
D. N. Nguyen, F. Irom
openaire   +1 more source

Multilevel Cell MRAMs

2017
Over the past three decades, several memory technologies have made their place in the market with varying degrees of commercial success, such as erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), static random-access memory (SRAM), dynamic RAM (DRAM), and NAND/NOR flash memories, with varying ...
Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati   +3 more
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STT-MRAM-Based Strong PUF Architecture

2015 IEEE Computer Society Annual Symposium on VLSI, 2015
Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) and Strong PUFs (i.e., devices able to deal with multiple challenges) are widely ...
Vatajelu, Elena Ioana, Di Natale, Giorgio, Torres, Lionel, Prinetto, Paolo   +3 more
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STT-MRAM for Automotive Applications

2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021
There is a growing need for fast, endurant, non-volatile solutions for automotive that can meet the harsh requirements of automotive conditions. Automotive applications place severe demands memory devices. In the case of data retention, Automotive Grade 0 requires survival of T ambient 150 °C for 20 years with no loss in data integrity.
K. Nagel, S. Aggarwal, G. Shimon, S. Ikegawa, F. Mancoff, J. Sun   +5 more
openaire   +1 more source

STT MRAM patterning challenges

SPIE Proceedings, 2013
In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive- Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented.
Werner Boullart, Dunja Radisic, Vasile Paraschiv, Sven Cornelissen, Mauricio Manfrini, Koichi Yatsuda, Eiichi Nishimura, Tetsuya Ohishi, Shigeru Tahara   +8 more
openaire   +1 more source