Results 71 to 80 of about 10,765 (164)

Recent progress in spin-orbit torque magnetic random-access memory

npj Spintronics
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen, S. Rao, K. Wostyn, S. Couet   +3 more
doaj   +1 more source

Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents a comprehensive spin-orbit torque (SOT)-based magnetic random access memory (MRAM) design at the 7 nm technology node, spanning from device-level characteristics to system-level power performance area (PPA).
Piyush Kumar, Da Eun Shim, Azad Naeemi
doaj   +1 more source

MRAM: A Multi-Radio Mesh With Adaptive Radio Silence for Resilient Communication

IEEE Open Journal of the Communications Society
First responder and mission-critical IoT applications require infrastructure-less, energy-efficient ad-hoc networks. We present MRAM, a custom handheld platform featuring a multi-radio mesh system that integrates long-range Wi-Fi and HaLow technologies ...
Kavin Kumar Thangadorai, Krishna M. Sivalingam, Kumar Murugesan, Anshul Pandey   +3 more
doaj   +1 more source

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

MRAM makes its mark

Nature Electronics, 2022
openaire   +2 more sources

Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet. [PDF]

Nat Commun
Guo Y, Chen A, Zeng Z, An T, Cui Q, Ga Y, Zheng D, Deng X, Zhang X, Tang M, Zhu Z, Wu C, Zhang J, Fan Y, Wang Z, Song W, Yan P, Zhu T, Wang S, Han X, Zhao J, Wang KL, Yu G, Zhang X, Wu H.   +24 more
europepmc   +1 more source

Manipulating transient SOT-MRAM switching dynamics for efficiency improvement and probabilistic switching. [PDF]

Sci Rep
Nallan S, Zhu JG.
europepmc   +1 more source

MRAM-Based FPGAs: A Survey

Over the last decade, field programmable gate arrays (FPGAs) have embraced heterogeneity in a transformative way by leveraging emerging memory devices along with conventional CMOS-based devices to realize technology-specific benefits. Memristive device technologies exhibit desirable characteristics such as non-volatility, scalability, near-zero leakage,
Peyton, Chandarana,, Mohammed, Elbtity,, F., DeMara, Ronald, Ramtin, Zand,   +3 more
openaire   +2 more sources

Introduction of RKKY-pMTJ-Based Ultrafast Magnetic Sensor Architecture and Magnetic Multilayer Optimization. [PDF]

Sensors (Basel)
Cho J, Kim JS.
europepmc   +1 more source

Editorial for the Topic on Magnetic Materials and Devices. [PDF]

Micromachines (Basel)
Sverdlov V.
europepmc   +1 more source