Results 81 to 90 of about 10,786 (185)

TGBNN: Training Algorithm of Binarized Neural Network With Ternary Gradients for MRAM-Based Computing-in-Memory Architecture

IEEE Access
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj   +1 more source

Magnetron Sputtering Synthesis of La‐Doped BiFeO3 Thin Films and Enhanced Exchange Bias in CoFeB/Bi1‐xLaxFeO3 Heterostructures

Advanced Physics Research, EarlyView.
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou, Ligang Bai, Chen Qi, Xiaoyang Lin, Ivair Aparecido dos Santos, Gustavo Sanguino Dias, Luiz Fernanado Cótica, Weisheng Zhao, Yanxue Chen, Tianxiao Nie, Guodong Wei   +10 more
wiley   +1 more source

The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency

Advanced Physics Research, EarlyView.
Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu, Tianci Tong, Delin Zhang, Tian Wang, Xinze Li, Ping Wang, Yong Jiang   +6 more
wiley   +1 more source

Spintronics and magnetic memory devices

Advances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi, OukJae Lee, Sunjae Chung, Woojin Kim, Taeyoung Lee, Byong-Guk Park, Seungmo Yang   +6 more
doaj   +1 more source

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

InfoMat, EarlyView.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He, Gaofei Wang, Jinfeng Zhai, Wentao Huang, Zhenyu Zhao, Zheng Zhang, Jiabin Shen, Pan He, Zengguang Cheng, Peng Zhou   +9 more
wiley   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, EarlyView.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source

Monovalent mannose‐glycoconjugates of sulforaphane reprogram human dendritic cells via NFATc1 to induce immune tolerance under inflammatory conditions

British Journal of Pharmacology, EarlyView.
Abstract Background and Purpose Immune tolerance prevents inflammation and autoimmunity, with dendritic cells (DCs) playing a key role. Reprogramming DCs towards a tolerogenic state represents a promising therapeutic strategy. Sulforaphane (SFN) has known immunomodulatory effects, but its clinical application is limited by poor stability and ...
María Elena Angarita‐Planchez, Camila Leiva‐Castro, Ana M. Múnera‐Rodríguez, Macarena Martínez‐Bailén, Ana T. Carmona, Soledad López‐Enríquez, Francisca Palomares   +6 more
wiley   +1 more source

Current Switching of Topological Spin Chirality in the van der Waals Antiferromagnet Co1/3TaS2

Advanced Materials, Volume 38, Issue 19, 1 April 2026.
Spin chirality plays a central role in quantum magnetism, governing spin winding and generating real‐space Berry phases. We propose the intriguing concept of current‐switching spin chirality and demonstrate it via unconventional intrinsic self‐spin‐orbit‐torque in pristine Co1/3TaS2, purely by electrical current and with high energy efficiency.
Kai‐Xuan Zhang, Seungbok Lee, Woonghee Cho, Je‐Geun Park   +3 more
wiley   +1 more source

Energy efficiency analysis of spin–orbit torque MRAM using composition dependent resistivity and spin Hall angle in Pt/W multilayer structure

APL Materials
Current-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed switching of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation memory technology.
Ji-won Yoon, Hyun-jun Lee, Ji-Hyeon Yun, Si-yeol Lee, Sang Ho Lim, Seung-heon Chris Baek   +5 more
doaj   +1 more source

Electrical TCAD Simulation of STT-MRAMs

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane, Postel-Pellerin, Jérémy, Yazigy, Nicole, Couzi, Noémie, Marca, Vincenzo, Canet, Pierre, Caçoilo, Nuno, Di Pendina, Grégory, Sousa, Ricardo   +8 more
openaire   +2 more sources