Results 11 to 20 of about 95,287 (194)

Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO₂ Coating [PDF]

Micromachines, 2021
The chemical, structural, morphological, and optical properties of Al-doped TiO2 thin films, called TiO2/Al2O3 nanolaminates, grown by plasma-enhanced atomic layer deposition (PEALD) on p-type Si and commercial SLG glass were discussed.
William Chiappim, Giorgio Testoni, Felipe Miranda, Mariana Fraga, Humber Furlan, David Ardiles Saravia, Argemiro da Silva Sobrinho, Gilberto Petraconi, Homero Maciel, Rodrigo Pessoa   +9 more
doaj   +2 more sources

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor [PDF]

Nanoscale Research Letters, 2019
For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta.
Bao Zhu, Zi-Jun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding   +5 more
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Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition [PDF]

Nanoscale Research Letters, 2017
Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated
Xi-Rui Zhao, Yan-Qiang Cao, Jun Chen, Lin Zhu, Xu Qian, Ai-Dong Li, Di Wu   +6 more
doaj   +2 more sources

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition [PDF]

Nanoscale Research Letters, 2017
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 ...
An-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, Erik Østreng, Yung-Sheng Fang, Xiao-Peng Wu, Bo-Wei Wu, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Chun-Yen Chang, Hao-Chung Kuo   +11 more
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Plasma Enhanced Atomic Layer Deposition on Powders [PDF]

ECS Transactions, 2014
During the last decades atomic layer deposition (ALD) gained a lot of interest for coating three dimensional structures with ultrathin conformal films. Although mainly applied on silicon wafers in microelectronics and solar, experimental efforts confirmed the technique is also applicable to powders and particles.
Geert Rampelberg, Delphine Longrie, Davy Deduytsche, C. Detavernier   +3 more
openaire   +3 more sources

Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching

Nanomaterials, 2022
The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques.
William Chiappim, Benedito Botan Neto, Michaela Shiotani, Júlia Karnopp, Luan Gonçalves, João Pedro Chaves, Argemiro da Silva Sobrinho, Joaquim Pratas Leitão, Mariana Fraga, Rodrigo Pessoa   +9 more
doaj   +1 more source

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2021
In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enhanced atomic layer deposition (PEALD) alternating with quasi-atomic layer etching (ALE).
Jaffal, Moustapha, Yeghoyan, Taguhi, Lefèvre, Gauthier, Gassilloud, Rémy, Possémé, Nicolas, Vallée, Christophe, Bonvalot, Marceline   +6 more
openaire   +3 more sources

Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Nanomaterials, 2023
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee   +6 more
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Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide [PDF]

Coatings, 2021
The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit ...
Pavel Fedorov, Denis Nazarov, Oleg Medvedev, Yury Koshtyal, Aleksander Rumyantsev, Vladimir Tolmachev, Anatoly Popovich, Maxim Yu Maximov   +7 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection

Journal of Electronic Science and Technology, 2022
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 ​nm–280 ​nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low ...
Ze-Yu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, Nadiia Pastukhova, Matjaz Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng, Qiang Zhou, Yan-Bo Li   +11 more
doaj   +1 more source