Results 41 to 50 of about 95,287 (194)

Design of a Solid Freeform Fabrication Diamond Reactor [PDF]

, 1990
Solid Freeform Fabrication (SFF) has progressed from the visualization aided stage of computer aided designs (CAD) to rapid prototyping of structural parts.
Marcus, Harris L., Thissell, W.Richards, Tompkins, James   +2 more
core   +1 more source

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Crystals, 2023
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu, Yangfeng Li, Jiayou Tao, Ruifan Tang, Xinhe Zheng   +4 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition of titanium vanadium nitride [PDF]

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2018
The authors have studied the plasma-enhanced atomic layer deposition of TixV1−xN using tetrakis(dimethylamido) titanium, tetrakis(dimethylamido) vanadium, and nitrogen plasma. Through modification of the ratio of TiN to VN deposition cycles, the value of x can be well controlled.
Mark J. Sowa, Ling Ju, Alexander C. Kozen, Nicholas C. Strandwitz, Guosong Zeng, Tomas F. Babuska, Zakaria Hsain, Brandon A. Krick   +7 more
openaire   +1 more source

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning [PDF]

, 2012
This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-kinsulator layer on GaAs. It is shown that high-kGaAsMIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex ...
Bosund, M., Huhtio, T., Jussila, H., Lipsanen, Harri, Mattila, P., Oksanen, J., Perros, A., Riikonen, J., Sopanen, Markku, Varpula, A.   +9 more
core   +1 more source

Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor [PDF]

, 2013
Two novel N-heterocyclic carbene (NHC)-containing copper(I) amides are reported as atomic layer deposition (ALD) precursors. 1,3-Diisopropyl-imidazolin-2-ylidene copper hexamethyldisilazide (1) and 4,5-dimethyl-1,3-diisopropyl-imidazol-2-ylidene copper ...
Barry, Seán T., Coyle, Jason P., Dey, Gangotri, Elliott, Simon D., Kemmell, Marianna L., Leskela, Markku, Ritala, Mikko, Sirianni, Eric R., Yap, Glenn P. A.   +8 more
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs [PDF]

, 2015
Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition ...
Aubry, R., di Forte-Poisson, M. A., Gamarra, P., Hjelmgren, Hans, Lacam, C., Malmros, Anna, Rorsman, Niklas, Thorsell, Mattias, Tordjman, M.   +8 more
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

MATEC Web of Conferences, 2016
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
doaj   +1 more source

Bifunctional earth-abundant phosphate/phosphide catalysts prepared via atomic layer deposition for electrocatalytic water splitting [PDF]

, 2019
The development of active and stable earth-abundant catalysts for hydrogen and oxygen evolution is one of the requirements for successful production of solar fuels.
Dendooven, Jolien, Detavernier, Christophe, Dobbelaere, Thomas, Henderick, Lowie, Martens, Johan A, Minjauw, Matthias, Rongé, Jan, Sree, Sreeprasanth Pulinthanathu   +7 more
core   +2 more sources

Passivation of Edge States in Etched InAs Sidewalls

, 2017
We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation.
Ensslin, Klaus, Ihn, Thomas, Karalic, Matija, Kovalenko, Maksym V., Mittag, Christopher, Müller, Susanne, Nazarenko, Olga, Tschirky, Thomas, Wegscheider, Werner   +8 more
core   +1 more source