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Thermal instability of low voltage power-MOSFETs
30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321), 2000Anomalous failures which occurred inside the theoretical forward biased safe operating area of the latest generation low voltage power MOS devices are reported and analyzed. The paper outlines how some technology improvements, while increasing the current capability, can induce thermal instability phenomena at low drain currents.
A. CONSOLI +6 more
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Power capability limits of power MOSFET devices
Microelectronics Reliability, 2002Abstract With technology progression, power capability becomes a more critical concern in optimizing power device designs in various smart power IC applications. Interaction between the electrical and thermal entities is essential in understanding the power capability limit of the semiconductor devices in both transient and steady-state operations ...
Young S Chung, Bob Baird
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2011
The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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The first two chapters offered an introduction to power MOSFET fundamentals and described the expectation on MOSFET performance from the point of view of different applications. This chapter provides some basic hints how to make a good power MOSFET, especially one optimized for hard switching applications.
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2007
This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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This chapter presents an overview of power metal oxide semiconductor field effect transistor (MOSFET). One of the main contributions that led to the growth of the power electronics field has been the unprecedented advancement in the semiconductor technology, especially with respect to switching speed and power handling capabilities.
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A new high voltage power MOSFET for power conversion applications
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances.
GALLUZZO A +4 more
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Wideband driver for power MOSFETs†
International Journal of Electronics, 1984Abstract A power MOSFET drive circuit which is not referenced to ground and which is suitable for wideband applications is reported. Biasing power and triggering signals are transformer-coupled separately to achieve electrical isolation between the driving circuitry and the controlled power stage.
C. F. CHRISTIANSEN +2 more
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Nanosecond switching using power MOSFETs
Review of Scientific Instruments, 1990It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of >800 V into 50 Ω with rise times of approximately 3 ns.
R. J. Baker, M. D. Pocha
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Cryogenic MOSFET power conversion
Proceedings of the Workshop on Low Temperature Semiconductor Electronics, 2003Possible applications of low-temperature electronics in the field of cryogenic power conversion are examined. Full-bridge amplifiers were built and tested at liquid-nitrogen temperature. Transistor conduction and switching losses are analyzed and compared for 300 K and 77 K. The effect of low-temperature operation on overall power conversion efficiency
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SiC Power MOSFET modeling challenges
2012 Students Conference on Engineering and Systems, 2012SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in ...
Rajendra Pratap +2 more
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Asymmetric gate resistor power MOSFET
2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012Power converters, e.g. in a popular synchronous buck topology, need high performance power MOSFETs in order to achieve high efficiency, low voltage ringing, ESD protection and low EMI. To satisfy these requirements, an asymmetric gate resistor power MOSFET is proposed by integrating a shunt resistor with a parallel LDMOSFET-connected diode in a source ...
Jun Wang +3 more
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