Results 31 to 40 of about 20,066 (272)
The phase-switched screen [PDF]
, 2004 Conventional (passive) radar-absorbent materials operate either by phase cancellation or by absorbing incident electromagnetic energy and converting it into heat. This paper examines a new type of active "absorber," called the phase-switched screen (PSS).
Chambers, B., Tennant, A.
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Extending Non-Volatile Operation to DRAM Cells
IEEE Access, 2013 This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei +2 more
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Resistive Crossbar-Aware Neural Network Design and Optimization
IEEE Access, 2020 Recent research in Non-Volatile Memory (NVM) and Processing-in-Memory (PIM) technologies has proposed low energy PIM-based system designs for high-performance neural network inference.
Muhammad Abdullah Hanif +2 more
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Universal electric-field-driven resistive transition in narrow-gap Mott insulators [PDF]
, 2013 One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition
Cario, Laurent +8 more
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A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF
Transactions on Cryptographic Hardware and Embedded Systems, 2018 The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang +5 more
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Resistive RAM Technology for SSDs
, 2017 Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chip applications in silicon-based CMOS technologies like microcontrollers for wireless sensor nodes in the Internet of Things environment, and automotive electronics.
ZAMBELLI, Cristian, OLIVO, Piero
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Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability [PDF]
2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 A deeper understanding of the impact of variability on Oxide-based Resistive Random Access Memory (so-called OxRRAM) is needed to propose variability tolerant designs to ensure the robustness of the technology. Although research has taken steps to resolve this issue, variability remains an important characteristic for OxRRAMs.
H. Aziza +5 more
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Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM [PDF]
, 2015 We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive ...
Buckwell, M +4 more
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IEEE Access, 2021 Power-efficient data processing subsystems performing millions of complex concurrent arithmetic operations per second form part of today’s essential solution required to meet the growing demand of edge computing applications, given the volume of ...
Nagaraj Lakshmana Prabhu +1 more
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Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses
, 2013 Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
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