Results 41 to 50 of about 20,066 (272)

CMOS-3D smart imager architectures for feature detection [PDF]

open access: yes, 2012
This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory.
D. Cabello   +6 more
core   +1 more source

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

open access: yesAdvances in Materials Science and Engineering, 2014
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells.
Jian-Yang Lin, Bing-Xun Wang
doaj   +1 more source

Electrode Material Dependence of Resistance Change Behavior in Ta2O5 Resistive Analog Neuromorphic Device

open access: yesIEEE Journal of the Electron Devices Society, 2018
In a human brain, our closest and very low-power information processor, one neuron transmits electrical signals depending on the electrical stimulation from other neurons.
Hisashi Shima   +3 more
doaj   +1 more source

Emulating the electrical activity of the neuron using a silicon oxide RRAM cell

open access: yesFrontiers in Neuroscience, 2016
In recent years, formidable effort has been devoted to exploring the potential of Resistive RAM (RRAM) devices to model key features of biological synapses.
Adnan eMehonic, Anthony eKenyon
doaj   +1 more source

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories

open access: yesFrontiers in Neuroscience, 2022
One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options.
Andrea Baroni   +11 more
doaj   +1 more source

Architecture of resistive RAM with write driver

open access: yesSolid State Electronics Letters, 2020
Abstract As technological advancements are increasing in the world at a faster rate, the need of miniaturization is also growing parallelly. The scaling of existing MOS technology in nanometre regime has caused some limitations such as drastically increase in leakage current, power consumption and some quantum mechanical effects.
Shashank Kumar Dubey   +5 more
openaire   +1 more source

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells [PDF]

open access: yes, 2011
In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties.
Aratani K.   +10 more
core   +1 more source

Nanoscale Ni/Mo/MoO3/Ni memristor for synaptic applications

open access: yesElectronics Letters
For the first time, a physics‐based modelling of a nanoscale Ni/Mo/MoO3/Ni memristor is presented in this letter by inserting a ‘Mo:Capping layer’ between the top electrode (Ni) and the insulating layer (MoO3).
Maryala Praveen   +2 more
doaj   +1 more source

An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)

open access: yesIEEE Access, 2020
Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza   +4 more
doaj   +1 more source

Protostellar Accretion Flows Destabilized by Magnetic Flux Redistribution

open access: yes, 2012
Magnetic flux redistribution lies at the heart of the problem of star formation in dense cores of molecular clouds that are magnetized to a realistic level.
Allen   +32 more
core   +1 more source

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