Results 81 to 90 of about 20,066 (272)

Resistive RAM-Centric Computing: Design and Modeling Methodology

IEEE Transactions on Circuits and Systems I: Regular Papers, 2017
Memory-centric computing with on-chip non-volatile memories provides unique opportunities for native and local information processing in an energy-efficient manner. Design and modeling methodology based on resistive random access memory (RRAM) is presented in this paper.
Haitong Li, Tony F. Wu, Subhasish Mitra, H.-S. Philip Wong   +3 more
openaire   +1 more source

Three‐Dimensional Printed Microarchitected Hierarchically Porous Biodegradable PLA/S/CNT Nanocomposite Electrodes for High‐Performance Lithium–Sulfur Batteries

Advanced Materials Technologies, EarlyView.
Hierarchically microarchitected PLA/S/CNT cathodes are fabricated via scalable fused filament 3D printing as high‐sulfur‐loading hosts for rechargeable lithium–sulfur batteries. The assembled Li–S cells with sulfur loadings up to 17 mg cm−2 deliver an areal capacity of 9.2 mAh cm−2 and retain 96% of their discharge capacity after 100 charge–discharge ...
Vinay Gupta, Pawan Verma, Fahad Alam, Krishnaiahnahundi Manjunathaswamy Mohan, Shanumgam Kumar   +4 more
wiley   +1 more source

Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing

Journal of Low Power Electronics and Applications, 2020
As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing
John Reuben
doaj   +1 more source

A State‐Adaptive Koopman Control Framework for Real‐Time Deformable Tool Manipulation in Robotic Environmental Swabbing

Advanced Robotics Research, EarlyView.
This work presents a state‐adaptive Koopman linear quadratic regulator framework for real‐time manipulation of a deformable swab tool in robotic environmental sampling. By combining Koopman linearization, tactile sensing, and centroid‐based force regulation, the system maintains stable contact forces and high coverage across flat and inclined surfaces.
Siavash Mahmoudi, Amirreza Davar, Dongyi Wang   +2 more
wiley   +1 more source

Memristive switching of MgO based magnetic tunnel junctions

, 2009
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state,
Krzysteczko, P., Reiss, G., Thomas, A.
core   +1 more source

A Plug‐and‐Play Volume Minimizing Micromixer

Advanced Science, EarlyView.
ABSTRACT Microscale fluid mixing has numerous applications where rapid and efficient mixing is required, including drug discovery, bio‐analysis and point‐of‐care diagnostics. Conventional soft lithography processes, however, make the integration of robust and reliable mixing difficult to implement in practice, especially across different flow rates ...
Kirill Kolesnik, Philipp Segeritz, Daniel J. Scott, David J. Collins   +3 more
wiley   +1 more source

Microscale Mapping of Fiber Strain and Damage in Composite Wrinkled Laminates Using Computed Tomography Assisted Wide‐Angle X‐Ray Scattering

Advanced Science, EarlyView.
This study combines full‐field tomography with diffraction mapping to quantify radial (ε002$\varepsilon _{002}$) and axial (ε100$\varepsilon _{100}$) lattice strain in wrinkled carbon‐fiber specimens for the first time. Radial microstrain gradients (−14.5 µεMPa$\varepsilon \mathrm{MPa}$−1) are found to signal damage‐prone zones ahead of failure, which ...
Hoang Minh Luong, James Trevarthen, Igor Dolbnya, Wadwan Singhapong, Nicholas Pilato, Richard Butler, Jiraphant Srisuriyachot, Alexander J. G. Lunt   +7 more
wiley   +1 more source

A symmetric 8T2R NVSRAM with autosave function

Electronics Letters
This letter presented a symmetric 8T2R NVSRAM with autosave function. By efficiently multiplexing the node voltages, the control of the nonvolatile memristor and the isolation of the data node from the memristor are achieved, which ensures an ...
Bowen Su, Jueping Cai, Yuxin Zhang, Yiding Wang   +3 more
doaj   +1 more source

Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions

, 2011
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology.
Chromik, Stefan, Kus, Peter, Noskovic, Jaroslav, Plecenik, Andrej, Plecenik, Tomas, Roch, Tomas, Spankova, Mariana, Tomasek, Milan, Truchly, Martin, Zahoran, Miroslav   +9 more
core   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

Advanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo, Jiseong Im, Joon Hwang, Sung‐Ho Park, Jonghyun Ko, Kangwook Choi, Sangwoo Ryu, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source