Results 1 to 10 of about 51,456 (290)
First-Principles Study on the Modulation of Schottky Barrier in Graphene/Janus MoSSe Heterojunctions by Interface Contact and Electric Field Effects [PDF]
NanomaterialsConstructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field ...
Zhe Zhang +3 more
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Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
N. Nanda Kumar Reddy, V. Rajagopal Reddy
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First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures [PDF]
NanomaterialsReducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer
Guowang Pang +3 more
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A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor [PDF]
Heliyon, 2023 In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires ...
Xiaoshi Jin +4 more
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Trap-Assisted Tunneling in the Schottky Barrier [PDF]
Radioengineering, 2013 The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling.
J. Racko +6 more
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The Barrier Inhomogeneity and the Electrical Characteristics of W/Au β-Ga2O3 Schottky Barrier Diodes [PDF]
MicromachinesIn this work, the electrical properties of the Ga2O3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β-Ga2O3 surface resulted in ...
Lei Xie +8 more
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Results in Physics, 2023 The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility
Shaofeng Zhang, Zhaowu Wang
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Scientific Reports, 2021 Schottky barrier controls the transfer of hot carriers between contacted metal and semiconductor, and decides the performance of plasmonic metal–semiconductor devices in many applications.
Zhiguang Sun, Yurui Fang
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Fundamental and Photodetector Application of Van Der Waals Schottky Junctions
Advanced Devices & Instrumentation, 2023 Two-dimensional (2D) materials with unique band structures have shown great potential for modern electronics and optoelectronics. The junction composed of metals and 2D van der Waals (vdW) materials, which is characterized by the Schottky barrier, is ...
Jing-Yuan Wu +3 more
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Photonics, 2021 GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively.
Fangzhou Liang +9 more
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