Results 151 to 160 of about 51,456 (290)

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration. [PDF]

Nanomaterials (Basel), 2023
Park BJ, Kim HS, Hahm SH.
europepmc   +1 more source

Robust and Tailored 1D/3D Heterojunction for Efficient and Stable Perovskite Solar Cells

Advanced Science, EarlyView.
This study successfully established a robust 1D/3D heterojunction, characterized by a stable 1D phase, favorable lattice matching, strong interface binding, and effective defect passivation. The resulting epitaxial perovskite film demonstrates preferential vertical orientation of (100) facets, thereby facilitating carriers’ transport and stress relief.
Wending Hao, Tao Liu, Xu Wang, Luan Li, Ziyu Zhang, Fengqi Sun, Qiang Luo, Ning Wang   +7 more
wiley   +1 more source

Photoconductive Gain Behavior of Ni/β-Ga₂O₃ Schottky Barrier Diode-Based UV Detectors. [PDF]

Micromachines (Basel)
Kopyev VV, Yakovlev NN, Tsymbalov AV, Almaev DA, Kosmachev PV.   +4 more
europepmc   +1 more source

Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. [PDF]

Materials (Basel), 2023
Bernat R, Knežević T, Radulović V, Snoj L, Makino T, Ohshima T, Capan I.   +6 more
europepmc   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. [PDF]

Sensors (Basel)
Li G, Lin W, Liu S, Aileplanm Y, Du A, Li L.   +5 more
europepmc   +1 more source

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes. [PDF]

Materials (Basel), 2023
Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I.   +5 more
europepmc   +1 more source

Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

Advanced Science, EarlyView.
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi   +7 more
wiley   +1 more source

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications. [PDF]

Micromachines (Basel), 2023
Mandal KC, Chaudhuri SK, Nag R.
europepmc   +1 more source

Dynamic Hydrogen‐Bonding Nanonetworks and Asymmetric Dual‐Interface Built‐In Electric Fields Cooperatively Mediate Proton‐Coupled Electron Transfer for C─H Activation

Advanced Science, EarlyView.
The general strategy for constructing proton–electron dual‐transport‐channel photocatalysts (hollow Co3S4/Sv‐chalcogenide/Ti3C2 nanoreactors) is developed. Theses ternary‐component nanoreactors feature dynamic hydrogen‐bonding nanonetworks as proton‐transport channels and asymmetric dual‐interface BIEFs as electron‐transport channels, serving as a ...
Yi‐Wen Han, Run‐Yu Liu, Yu Chen, Lei Ye, Tian‐Jun Gong, Xue‐Bin Lu, Ning Yan, Yao Fu   +7 more
wiley   +1 more source