Results 231 to 240 of about 51,456 (290)
Carbon Energy, EarlyView.A combination of visible light and thermal energy accelerates the CO formation rate up to 57 times compared to dark conditions using a 3Cu/CeTiO2−x catalyst. Kinetic analysis, as well as steady state and transient spectroscopy, was applied under photocatalytic conditions to analyze and disentangle the reaction channels under dark and illuminated ...
Miha Okorn +4 more
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Carbon Energy, EarlyView.A compact and morphologically uniform electron transport layer is created by blending PC61BM with a small amount of P3HT. The optimized architecture enables efficient charge extraction and suppresses interfacial recombination, which enhances power conversion efficiency and strengthens long‐term operational stability in tin‐based perovskite solar cells,
Du Hyeon Ryu +8 more
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Schottky-barrier-free plasmonic photocatalysts
Physical Chemistry Chemical Physics, 2023Schottky-barrier-free plasmonic photocatalysts are proposed for high-performance photocatalysis. They are made of degenerately doped semiconductors, possess strong plasmon resonance, and exhibit broadband light absorption for solar energy harvesting.
Ke An, Jingtian Hu, Jianfang Wang
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Carbon–Silicon Schottky Barrier Diodes
Small, 2012The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim +4 more
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Schottky barrier: models and “tests”
Surface Science Letters, 1983Abstract The concepts employed and models referred to in discussing metal-semiconductor interfaces are briefly discussed. The current status of experimental studies of a few such systems is examined. We emphasize the necessity of distinguishing between different possible mechanisms involved in determining the properties of these interfaces, and point
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From heterojunctions to Schottky barriers
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989The relations between Schottky barriers and heterojunctions were explored by studying heterojunction band lineups with metal intralayers, as a function of the intralayer thickness. The results can be explained by introducing Schottky-like terms in midgap-energy models. Such terms, however, do not imply the formation of a truly metallic intralayer.
D. W. Niles +4 more
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Nature of the Schottky term in the Schottky barrier
Physical Review Letters, 1989Note: Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. Chang, y, univ wisconsin,dept phys,madison,wi 53706.ISI Document Delivery No.: AV754 Reference LSE-ARTICLE-1989-004 Record created on 2006-10-03, modified on 2017-05 ...
, Chang +4 more
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Schottky barriers to CdS and their importance in Schottky barrier theories
Semiconductor Science and Technology, 1989A study of the transport properties of Schottky barriers to the vacuum- and air-cleaved surfaces of CdS have yielded a wide range of barrier heights which, contrary to popular belief, show no linear correlation with the metal work function. The characteristics have shown a strong dependence on the methods of preparation and subsequent treatment of the ...
N M Forsyth +3 more
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Direct Probing of Schottky Barriers in Si Nanowire Schottky Barrier Field Effect Transistors
Physical Review Letters, 2011This work elucidates the role of the Schottky junction in the electronic transport of nanometer-scale transistors. In the example of Schottky barrier silicon nanowire field effect transistors, an electrical scanning probe technique is applied to examine the charge transport effects of a nanometer-scale local top gate during operation. The results prove
Dominik, Martin +6 more
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Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
openaire +1 more source