Results 101 to 110 of about 2,404 (155)
Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2013 Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as
Usha Parihar, N. Padha, C.J. Panchal
doaj
Small, EarlyView.This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider +7 more
wiley +1 more source
STRUCTURE AND techological improvments of tmbs diodes
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and ...
V. S. Kotov +2 more
doaj
Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012 Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A. +4 more
doaj
AstroECP: towards more practical electron channeling contrast imaging
Journal of Applied Crystallography, EarlyView.We explore and address many of the major challenges associated with using electron channeling contrast imaging in a scanning electron microscope, with the goal of more easily revealing and characterizing crystalline defects such as dislocations.Electron channeling contrast imaging (ECCI) is a scanning electron microscope based technique which enables ...
M. Haroon Qaiser +7 more
wiley +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Small Science, Volume 6, Issue 4, April 2026.Ballistic graphene rectifier capable of operating at frequencies up to 3 THz, engineered through asymmetric nanojunction geometries in high‐mobility monolayer graphene encapsulated in hexagonal boron nitride Graphene exhibits the longest carrier mean free path of any known electronic material, yet only a few device concepts have successfully leveraged ...
Lili Shi +4 more
wiley +1 more source
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction. [PDF]
Nanoscale Res Lett, 2020 Sun T, Luo X, Wei J, Yang C, Zhang B.
europepmc +1 more source
Gallium Nitride Schottky Devices for UV and Particle Sensing Applications
physica status solidi (a), Volume 223, Issue 5, 6 March 2026.Gallium nitride Schottky devices on native substrates have potential for reliable, low‐leakage, and high‐performance radiation detection in extreme environments. The study explores carrier dynamics by laterally scanning a pulsed‐UV laser from the edge of the Schottky to assess charge collection, and extracts defect properties by optical‐DLTS that ...
Alexandre William Walker +6 more
wiley +1 more source
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. [PDF]
Nanomaterials (Basel), 2020 Sun Y +7 more
europepmc +1 more source