The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang +4 more
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A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer. [PDF]
Sun Y +5 more
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Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure. [PDF]
Li CY +4 more
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Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]
Karaca A, Yıldız DE, Tataroğlu A.
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Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)-Na complex with a compartmental Schiff base ligand. [PDF]
Ghosh K +5 more
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Free-space optical communications at 4 Gbit/s data rate with a terahertz laser. [PDF]
Elumalai J +9 more
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Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application. [PDF]
Han S +10 more
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Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. [PDF]
Li G +5 more
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Investigation of electrical transport mechanisms in an n-CdIn<sub>2</sub>Se<sub>4</sub>/Pt thin film Schottky diode fabricated by pulsed laser deposition. [PDF]
Dhruv SD +10 more
europepmc +1 more source
Electrical performance of a nanocomposite diode based on palladium nanoparticles- and polyethyleneimine functionalized nitrogen-doped graphene quantum dots. [PDF]
Dikicioğlu E +3 more
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