Results 11 to 20 of about 2,404 (155)

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics [PDF]

Nanomaterials
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang, Hongyu Yu   +10 more
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A method for improving the betavoltaic cell’s conversion efficiency: Using the alloy as Schottky metal

AIP Advances, 2022
Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang, Jingbin Lu, Renzhou Zheng, Xiaoyi Li, Yumin Liu, Xue Zhang, Yuehui Zhang, Ziyi Chen   +7 more
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges

Energies, 2023
Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada, Ikuo Nanno, Norio Ishikura, Masayuki Fujii, Shinichiro Oke   +4 more
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Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

Micromachines, 2022
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
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Fundamental and Photodetector Application of Van Der Waals Schottky Junctions

Advanced Devices & Instrumentation, 2023
Two-dimensional (2D) materials with unique band structures have shown great potential for modern electronics and optoelectronics. The junction composed of metals and 2D van der Waals (vdW) materials, which is characterized by the Schottky barrier, is ...
Jing-Yuan Wu, Hai-Yang Jiang, Zhao-Yang Wen, Chun-Rui Wang   +3 more
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Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K

IEEE Journal of the Electron Devices Society, 2020
In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2.
M. Malakoutian, M. Benipal, F. A. Koeck, R. J. Nemanich, S. Chowdhury   +4 more
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Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Nanoscale Research Letters, 2019
We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +10 more
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Schottky barrier height modulation and photoconductivity in a vertical graphene/ReSe2 vdW p-n heterojunction barristor

Journal of Materials Research and Technology, 2022
A 3-terminal device with a tunable Schottky barrier controls the charge transport across a vertically stacked structure named “barristor”- one composed of a graphene/rhenium diselenide (ReSe2) p-n heterojunction to exploit the advantages of the high ...
Thi Phuong-Anh Bach, Syed Hassan Abbas Jaffery, Dinh Cong Nguyen, Asif Ali, Sajjad Hussain, Muhammad Hussain, Yongho Seo, Jongwan Jung   +7 more
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Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Sensors, 2011
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Farahiyah Mustafa, Abdul Rahim Abdul Rahman   +3 more
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Materials Research Express, 2020
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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