Results 21 to 30 of about 2,404 (155)
Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells
Kuwait Journal of Science, 2022 Schottky diode Al/a-Se/Au as solar cells (SC) were made up by thermal evaporation technique (TET) on glass thin slide at a substrate under vacuum (vacuum value equal to mbar).
Mayyada Fdhala +4 more
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A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
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Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy +3 more
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Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
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IEEE Journal of the Electron Devices Society, 2023 In this letter, a high performance quasi-vertical GaN-on-Si Schottky barrier diode (SBD) was fabricated by combing in-situ p-GaN layer with hydrogen plasma treatment and controlled diffusion as edge terminations (ETs), where the main junction region of ...
Xuan Liu +6 more
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Results in Physics, 2019 Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one
Fatih Gül
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AIP Advances, 2015 This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty +6 more
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Applied Sciences, 2019 Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes.
Rahimah Mohd Saman +5 more
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Schottky Contact of Gallium on p-Type Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
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