Results 31 to 40 of about 2,404 (155)

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Beilstein Journal of Nanotechnology, 2016
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova   +5 more
doaj   +1 more source

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Walailak Journal of Science and Technology, 2018
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN   +4 more
doaj   +1 more source

Development of photocatalysis‐membrane separation reactor systems for aqueous pollutant removal

PhotoMat, EarlyView., 2023
Abstract Background In our rapidly expanding society, the demand for clean water has steadily emerged as one of the most critical issues, promoting the development of numerous water treatment strategies. Aims Coupling photocatalysis and membrane separation technology provides an energy saving and environment‐friendly as well as sustainable method for ...
Junyang Zhang, Yingchun Miao, Yuning Huo, Hexing Li   +3 more
wiley   +1 more source

Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes

Micromachines, 2022
Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication.
Julio C. Tinoco, Samuel A. Hernandez, María de la Luz Olvera, Magali Estrada, Rodolfo García, Andrea G. Martinez-Lopez   +5 more
doaj   +1 more source

Metal-semiconductor Schottky diode with Landauer’s formalism

Nano Express
The Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo, Kimberly Intonti, Luciano Peluso, Rosangela Di Marco, Gerardo Vocca, Francesco Romeo, Filippo Giubileo, Alessandro Grillo, Elif Orhan   +8 more
doaj   +1 more source

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

International Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

Advanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng, Jiawen Zhang, Peng Gao, Guosong Zeng, Xufei Fang, Wenjun Lu   +5 more
wiley   +1 more source

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

IEEE Journal of the Electron Devices Society, 2022
In recent years, gallium nitride (GaN) has exhibited tremendous potential for power electronic devices owing to its wider energy band gap, higher breakdown electric field, and higher carrier mobility [1]–[4].
Heng Wang, Sihao Chen, Hang Chen, Chao Liu   +3 more
doaj   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source