Results 51 to 60 of about 2,404 (155)

Advances in Halide Perovskites for Photon Radiation Detectors

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang   +3 more
wiley   +1 more source

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

open access: yesIEEE Access, 2020
Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling.
Ling-Feng Mao
doaj   +1 more source

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

open access: yesAdvanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim   +4 more
wiley   +1 more source

A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
doaj  

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo   +12 more
wiley   +1 more source

Dirac Surface‐State Driven Broad Spectral Band Low Quantum Energy Photoresponse in Quaternary Topological BiSbSe2Te

open access: yesAdvanced Science, EarlyView.
Quaternary topological BiSbSe2Te are synthesized and demonstrates a broad spectral band photoresponse, ranging from infrared to terahertz and to millimeter waves, with a particular excellence on detection of low quantum energy terahertz photons. The observed photoresponse is attributed to the excitation of plasmonic nonequilibrium electrons originating
Tianning Zhang   +14 more
wiley   +1 more source

Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K.
K.K. Patel   +5 more
doaj  

Tuning Li+ and Na+ Functionality in Renewable Carbon Electroactive Material Through Site‐Specific Nanostructural Disorder

open access: yesAdvanced Science, EarlyView.
This study presents a selective thermal transformation of polycarbonate into hybrid carbon materials. The structured carbon enhances electrochemical performance, particularly in lithium‐ion systems. Investigations reveal improved bimetallic ion diffusivity through the hybrid microstructure, contributing to excellent charge kinetics.
Montajar Sarkar   +7 more
wiley   +1 more source

Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures

open access: yesEast European Journal of Physics
The dependence of the temperature of charge carriers and phonons on the contact resistance of the Schottky diode is calculated. It is shown that the increase in contact resistance depends on the current passing through the diode, the surface and volume ...
Gafur Gulyamov   +2 more
doaj   +1 more source

Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

open access: yesMicro and Nano Engineering, 2019
A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films
S. Fareed   +3 more
doaj   +1 more source

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