Single-Event Effects in CMOS Image Sensors [PDF]
IEEE Transactions on Nuclear Science, 2013 In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian +4 more
openaire +8 more sources
Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature. [PDF]
Sensors (Basel), 2018 This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Art L +9 more
europepmc +2 more sources
Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. [PDF]
Micromachines (Basel)GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate ...
Zhang X +11 more
europepmc +2 more sources
Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning. [PDF]
Micromachines (Basel), 2023 Single-event effects (SEE) are an important index of radiation resistance for fully depleted silicon on insulator (FDSOI) devices. The research into traditional FDSOI devices is based on simulation software, which is time consuming, requires a large ...
Zhao R +7 more
europepmc +2 more sources
Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits. [PDF]
Sensors (Basel), 2020 It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Sarker MAR +8 more
europepmc +2 more sources
Single event effects qualificatoin of integrated circuits
Безопасность информационных технологий, 2020 The goal of qualification or monitoring of electronic device radiation testings is to ensure that devices meet the set of requirements. In some cases, this can be achieved without full characterization of radiation behavior, which leads to significant ...
Armen V. Sogoyan +2 more
doaj +3 more sources
Investigation and feasibility study of using components with different categories from the perspective of radiation damage in LEO and GEO orbits [PDF]
فصلنامه علوم و فناوری فضایی, 2021 Space radiation can affect the performance and reliability of components in space systems. This paper focuses on the investigation of three types of radiation damage including ionizing dose, displacement damage, and single event damage using OMERE ...
Hamideh Daneshvar +4 more
doaj +1 more source
He jishu, 2023 BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming +9 more
doaj +1 more source
Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node
Applied Sciences, 2022 Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash +6 more
doaj +1 more source
Triple Modular Redundancy verification via heuristic netlist analysis [PDF]
PeerJ Computer Science, 2015 Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
doaj +2 more sources