Results 11 to 20 of about 2,945,737 (301)
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
doaj +1 more source
NAIRAS Model Run‐On‐Request Service at CCMC
The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens +8 more
doaj +1 more source
The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng +8 more
doaj +1 more source
Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park +5 more
doaj +1 more source
Hardness assurance levels and requirements for single event effects testing of integrated circuits
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov +13 more
doaj +1 more source
Bootstrapped Driver and the Single-Event-Upset Effect [PDF]
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-Daloo +3 more
openaire +3 more sources
Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano +3 more
doaj +1 more source
The device downscaling of electronic components has given rise to the need to consider specific failures in onboard airplane electronics. Single Event Effects (SEE) are a kind of failures that occur due to radiation in the atmosphere.
Hugo Cintas +7 more
doaj +1 more source
Evaluation of commercial ADC radiation tolerance for accelerator experiments [PDF]
Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation.
Chen, Hucheng +9 more
core +1 more source
Single Event Effects Rate Calculation with Different Models
The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov +5 more
doaj +1 more source

