Results 11 to 20 of about 2,945,737 (301)

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

open access: yesMicromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang   +11 more
doaj   +1 more source

NAIRAS Model Run‐On‐Request Service at CCMC

open access: yesSpace Weather, 2023
The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens   +8 more
doaj   +1 more source

Recent progress and development trend of femtosecond pulsed-laser for single event effects assessment

open access: yesHe jishu, 2021
The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng   +8 more
doaj   +1 more source

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

open access: yesJournal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park   +5 more
doaj   +1 more source

Hardness assurance levels and requirements for single event effects testing of integrated circuits

open access: yesБезопасность информационных технологий, 2020
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov   +13 more
doaj   +1 more source

Bootstrapped Driver and the Single-Event-Upset Effect [PDF]

open access: yesIEEE Transactions on Circuits and Systems I: Regular Papers, 2020
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-Daloo   +3 more
openaire   +3 more sources

Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs

open access: yesInstruments, 2019
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano   +3 more
doaj   +1 more source

RAMSEES: A Model of the Atmospheric Radiative Environment Based on Geant4 Simulation of Extensive Air Shower

open access: yesAerospace, 2023
The device downscaling of electronic components has given rise to the need to consider specific failures in onboard airplane electronics. Single Event Effects (SEE) are a kind of failures that occur due to radiation in the atmosphere.
Hugo Cintas   +7 more
doaj   +1 more source

Evaluation of commercial ADC radiation tolerance for accelerator experiments [PDF]

open access: yes, 2015
Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation.
Chen, Hucheng   +9 more
core   +1 more source

Single Event Effects Rate Calculation with Different Models

open access: yesБезопасность информационных технологий, 2017
The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov   +5 more
doaj   +1 more source

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