Results 11 to 20 of about 2,953,642 (298)

Investigation and feasibility study of using components with different categories from the perspective of radiation damage in LEO and GEO orbits [PDF]

فصلنامه علوم و فناوری فضایی, 2021
Space radiation can affect the performance and reliability of components in space systems. This paper focuses on the investigation of three types of radiation damage including ionizing dose, displacement damage, and single event damage using OMERE ...
Hamideh Daneshvar, Azam Eidi, Leila Mohamadi, Reza Omidi, Pedram Hajipour   +4 more
doaj   +1 more source

Accelerator simulation test technology and its application for single event effect evaluation in space

He jishu, 2023
BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming, GUO Gang, SUI Li, LIU Jiancheng, ZHANG Yanwen, ZHANG Fuqiang, YIN Qian, HAN Jinhua, ZHANG Zheng, SUN Haohan   +9 more
doaj   +1 more source

Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node

Applied Sciences, 2022
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash, Zongru Li, Chen Jin, Li Chen, Jiesi Xing, Zhiwu Yang, Shuting Shi   +6 more
doaj   +1 more source

Triple Modular Redundancy verification via heuristic netlist analysis [PDF]

PeerJ Computer Science, 2015
Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
doaj   +2 more sources

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

NAIRAS Model Run‐On‐Request Service at CCMC

Space Weather, 2023
The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens, G. P. Gronoff, Y. Zheng, M. Petrenko, J. Buhler, D. Phoenix, E. Willis, I. Jun, J. Minow   +8 more
doaj   +1 more source

Recent progress and development trend of femtosecond pulsed-laser for single event effects assessment

He jishu, 2021
The current status and technical development trend of single event effect (SEE) induced by two-photon absorption (TPA) of femtosecond pulsed laser at home and abroad are reviewed.
AN Heng, LI Detian, YANG Shengsheng, WANG Yi, CAO Zhou, WEN Xuan, WANG Jun, ZHANG Chenguang, YIN Hong   +8 more
doaj   +1 more source

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

Journal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park, Jang-Soo Chae, Chol Lee, Jungsu Lee, Im Hyu Shin, Ji Eun Kim   +5 more
doaj   +1 more source

Custom Scrubbing for Robust Configuration Hardening in Xilinx FPGAs

Instruments, 2019
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration.
Raffaele Giordano, Dario Barbieri, Sabrina Perrella, Roberto Catalano   +3 more
doaj   +1 more source

Hardness assurance levels and requirements for single event effects testing of integrated circuits

Безопасность информационных технологий, 2020
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment.
Alexander I. Chumakov, Armen V. Sogoyan, Anatoly A. Smolin, Alexey O. Ahmetov, Dmitry V. Bobrovsky, Dmitry V. Boychenko, Nikolai V. Ryasnoy, Konstantin A. Chumakov, Evgeny V. Churilin, Vladimir F. Gerasimov, Vitaly V. Khaustov, Alexander A. Sashov, Anastasia V. Ulanova, Andrey V. Yanenko   +13 more
doaj   +1 more source