Results 241 to 250 of about 2,945,737 (301)

Attention performance in emergency physicians: the effect of shift duration and cardiac arrest cases. [PDF]

BMC Emerg Med
Yasak İH, Demir HA, Şeyhanlı ES, Giden R, Barut E.   +4 more
europepmc   +1 more source

Rhythmic sampling of multiple decision alternatives in the human brain. [PDF]

Nat Commun
Siems M, Cao Y, Tohidi-Moghaddam M, Donner TH, Tsetsos K.   +4 more
europepmc   +1 more source

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Single-Event Effects in STT MRAM

2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021
STT MRAM’s greater memory density and inherent radiation tolerance has made it an attractive non-volatile memory option for the space and radiation effects community. Two Single-Event Effects (SEE) in STT MRAM will be discussed, which are bit-flips due to magnetization reversal of the ferromagnetic layers [1] and a negative bit resistance shift caused ...
Douglas Martin, K. Deniz Bozdag, Mark Savage, John Steele   +3 more
openaire   +1 more source

Single-event effects on optical transceiver

2018 IEEE International Reliability Physics Symposium (IRPS), 2018
All communications systems use optical modules to achieve data transfer speeds in the 10's of GBPS range. With increasing reliance on communication systems, the impact of soft errors in optical transceiver modules has become a primary concern for system performance.
K. J. Lezon, S.-J. Wen, Y.-F. Dan, R. Wong, B. L. Bhuva   +4 more
openaire   +1 more source

Single-event effects in micromachined PMOSFETs

ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002
Single-event effects in micromachined PMOSFETs in a 2 /spl mu/m standard CMOS process are examined using device simulation. A comparison with the bulk and SOI PMOSFETs with comparable structures is also provided. The effects of N-well depth, angle of incidence, and N-well contact have been investigated in micromachined transistors.
A.A. Osman, M. Mojarradi, K. Mayaram
openaire   +1 more source

Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
openaire   +1 more source