Results 31 to 40 of about 1,247 (195)

Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling [PDF]

, 2013
We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure.
D'Amico, Pino, Fiori, Gianluca, Iannaccone, Giuseppe, Marconcini, Paolo   +3 more
core   +2 more sources

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

IEEE Journal of the Electron Devices Society, 2015
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of ...
Li, Mingda, ESSENI, David, Nahas, Joseph J., Jena, Debdeep, Xing, Huili Grace   +4 more
openaire   +3 more sources

Comment On >Assessment Of Field-Induced Quantum Confinement In Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor> Appl. Phys. Lett. 105, 082108 (2014) [PDF]

, 2015
Not AvailableNRI SWAN programNSF NASCENT ERCMicroelectronics Research CenterElectrical and Computer ...
Banerjee, Sanjay K., Hsu, William, Mantey, Jason, Register, Leonard F.   +3 more
core   +1 more source

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Nanoscale Research Letters, 2020
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen   +4 more
doaj   +1 more source

Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance

IET Circuits, Devices and Systems, 2021
In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
doaj   +1 more source

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

, 2010
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage.
Aydin, Bhuwalka, Bhuwalka, Bhuwalka, Boucart, Choi, Dhar, Dobrovolsky, Hansch, Hurkx, Lim, M. Jagadesh Kumar, Nagavarapu, Nirschl, Numata, Reddick, Sedlmaier, Shen, Sneh Saurabh, Takagi, Tehrani, Uemura, Wang, Wang, Zhang, Zhang   +25 more
core   +1 more source

Switching Mechanism and the Scalability of vertical-TFETs

, 2017
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET
Chen, Fan, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Tan, Yaohua   +4 more
core   +1 more source

Tunnel Field-Effect Transistors: Prospects and Challenges

IEEE Journal of the Electron Devices Society, 2015
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement
Uygar E. Avci, Daniel H. Morris, Ian A. Young   +2 more
doaj   +1 more source

TFET-Based Voltage Detector: Proposal and Investigation

IEEE Access, 2020
In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation.
Zhaonian Yang, Panqi Gao
doaj   +1 more source

Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]

Journal of Electrical and Computer Engineering Innovations, 2018
Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj   +1 more source