Results 41 to 50 of about 1,247 (195)

Design Rules for High Performance Tunnel Transistors from 2D Materials

, 2016
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical ...
Appenzeller, Joerg, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib   +3 more
core   +1 more source

Model of tunneling transistors based on graphene on SiC

, 2010
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics.
Giuseppe Iannaccone, Grassi R., Martina Cheli, Paolo Michetti   +3 more
core   +1 more source

Simulation of Dual-Material Hetero-Double Gate Tunnel Field Effect Transistor (TFET) in Sub-Micron Region

Journal of Engineering Technology and Applied Physics, 2023
To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj   +1 more source

Scalable GaSb/InAs tunnel FETs with non-uniform body thickness

, 2016
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$).
Huang, Jun Z., Klimeck, Gerhard, Long, Pengyu, Povolotskyi, Michael, Rodwell, Mark J. W.   +4 more
core   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

IEEE Journal of the Electron Devices Society, 2014
In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET).
Dawit B. Abdi, M. Jagadesh Kumar
doaj   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Nanomaterials, 2019
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field ...
Hongliang Lu, Bin Lu, Yuming Zhang, Yimen Zhang, Zhijun Lv   +4 more
doaj   +1 more source

Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

, 2015
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current.
Huang, Jun Z., Klimeck, Gerhard, Long, Pengyu, Povolotskyi, Michael, Zhang, Lining   +4 more
core   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo, Hongda Ren, Yang Zhang, Jianhua Hao   +3 more
wiley   +1 more source