Results 51 to 60 of about 1,247 (195)
, 2018 In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian.
Choukroun, Jean +4 more
core +1 more source
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley +1 more source
Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2014 This study presents a new asymmetric junctionless tunnel field-effect transistor (AJ-TFET) to scale TFETs into sub-10-nm regimes. The asymmetric junctionless p+ source/body and junctional n/p+ drain/body separately optimize the lateral source and drain ...
Chun-Hsing Shih, Nguyen Van Kien
doaj +1 more source
Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET
IEEE Access, 2022 The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya +3 more
doaj +1 more source
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu +5 more
wiley +1 more source
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
doaj +1 more source
Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo +2 more
wiley +1 more source
Comparative Study of Steep Switching Devices for 1T Dynamic Memory
Tecnología en MarchaThis work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha +3 more
doaj +1 more source
Micromachines, 2019 L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
doaj +1 more source
, 2013 The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET ...
Esseni, David +4 more
core +1 more source