Results 61 to 70 of about 1,247 (194)
, 2013 The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET ...
Esseni, David +4 more
core +1 more source
Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin +4 more
wiley +1 more source
P-Type Tunnel FETs With Triple Heterojunctions
, 2016 A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create two resonant ...
Huang, Jun Z. +4 more
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Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEurope, Volume 3, Issue 6, November 11, 2025.Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley +1 more source
Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
doaj +1 more source
Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy
Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou +4 more
wiley +1 more source
Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors
Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang +4 more
wiley +1 more source
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
IEEE Journal of the Electron Devices Society, 2019 A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu +2 more
doaj +1 more source
From Classical Ferroelectricity to Emerging Low‐Dimensional Phases
Advanced Physics Research, Volume 4, Issue 11, November 2025.Ferroelectricity is undergoing a renaissance, moving from classical perovskites to hafnia‐based thin films and low‐dimensional van der Waals crystals. Recent advances reveal exotic polarization mechanisms, ultrathin stability, and coupling with topology and valley physics.
Marius Adrian Husanu, Dana G. Popescu
wiley +1 more source
Miller effect suppression of tunnel field‐effect transistors (TFETs) using capacitor neutralisation
Electronics Letters, 2016 A novel method of suppressing the Miller effects of tunnel field‐effect transistors (TFETs) is proposed by using capacitor neutralisation. Since TFETs suffer from more severe Miller effects than metal‐oxide‐semiconductor FETs, conventional ways such as short‐gate structures are not sufficient to fully suppress the Miller effects of TFETs.
openaire +1 more source