Results 1 to 10 of about 9,722 (211)

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]

Micromachines
As an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye, Xiaofei Zhang, Nannan Lu, Jiawei Li, Jun Jia, Guilin Zhao, Jiejie Sun, Lei Zhang, Chao Wang   +8 more
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On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2021
A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
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Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet [PDF]

Nature Communications
Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled
Yaqin Guo, Aitian Chen, Zhaozhuo Zeng, Tai An, Qirui Cui, Yonglong Ga, Dongxing Zheng, Xiao Deng, Xu Zhang, Meng Tang, Zengtai Zhu, Chuangwen Wu, Jing Zhang, Yibo Fan, Zhe Wang, Wenjie Song, Peng Yan, Tao Zhu, Shouguo Wang, Xiufeng Han, Jinkui Zhao, Kang L. Wang, Guoqiang Yu, Xixiang Zhang, Hao Wu   +24 more
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Improving MRAM Performance with Sparse Modulation and Hamming Error Correction [PDF]

Sensors
With the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le, Thien An Nguyen, Jong-Ho Lee, Jaejin Lee   +3 more
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Harnessing orbital Hall effect in spin-orbit torque MRAM [PDF]

Nature Communications
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching,
Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Arnab Bose, Iryna Kononenko, Sylvain Martin, Perrine Usé, Gerhard Jakob, Marc Drouard, Mathias Kläui   +10 more
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Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies

Успехи физики металлов, 2021
The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
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Magnetic Random Access Memories (MRAM) beyond Information Storage [PDF]

2020 IEEE Symposium on VLSI Technology, 2020
Magnetic random access memory (MRAM) is now available as embedded memory from major CMOS foundries. In this study, we demonstrated that slightly modified magnetic tunnel junctions than those used in conventional STT -MRAM can be used for multifunctional purposes, namely magnetic field sensing and RF oscillators.
Sousa, Ricardo C., Chavent, A., Iurchuk, V., Vila, L., Ebels, U., Dleny, B., Di Pendina, G., Prenat, G., Langer, J., Wrona, J., Prejbeanu, I.L.   +10 more
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Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches

IEEE Access, 2022
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim, Yuze Chen, Yongho Lee, Limei Peng, Seokin Hong   +4 more
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Benchmarking and Optimization of Spintronic Memory Arrays

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
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