Results 91 to 100 of about 9,722 (211)

Research progress and challenges of the self-heating effect in STT-MRAM devices

Gongneng cailiao yu qijian xuebao
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN, Saike ZHU, Shifan GAO, Yiming QU   +3 more
doaj   +1 more source

Advanced hybrid MRAM based novel GPU cache system for graphic processing with high efficiency

AIP Advances
With the rapid development of portable computing devices and users’ demand for high-quality graphics rendering, embedded Graphics Processing Units (GPU) systems for graphics processing are increasingly turning into a key component of computer ...
Shaopu Han, Yanfeng Jiang
doaj   +1 more source

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Scientific Reports
In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for
Ting Liu, Xiaoguang Li, Hongyu An, Shi Chen, Yuelei Zhao, Sheng Yang, Xiaohong Xu, Cangtao Zhou, Hua Zhang, Yan Zhou   +9 more
doaj   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

Field-free spin–orbit torque devices for logic and neural network applications

APL Machine Learning
Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved ...
Chun-Yi Lin, Jui-Yu Hsieh, Po-Chuan Wang, Chia-Chin Tsai, Chi-Feng Pai   +4 more
doaj   +1 more source

Accuracy Improvement With Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang, Na Wei, Shifan Gao, Wenhao Wu, Yi Zhao   +4 more
doaj   +1 more source

Deep Learning-Based Decoding of Linear Block Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

Thanks to its superior features of fast read/write speed and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising non-volatile memory (NVM) technology that is suitable for many applications. However, the reliability of STT-MRAM is seriously affected by the variation of the memory fabrication ...
Zhong, Xingwei, Cai, Kui, Mei, Zhen, Quek, Tony Q. S.   +3 more
openaire   +2 more sources

Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]

Journal of Systemics, Cybernetics and Informatics, 2018
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr   +2 more
doaj  

TGBNN: Training Algorithm of Binarized Neural Network With Ternary Gradients for MRAM-Based Computing-in-Memory Architecture

IEEE Access
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj   +1 more source

Reduction of current for magnetization switching in a nanomagnet with perpendicular anisotropy by spin-splitter torque

Applied Physics Express
This study investigates spin-splitter torque (SST) for magnetization switching in nanoscale magnets with perpendicular anisotropy, aiming to reduce current requirements in magnetic memory devices.
Tomoki Watanabe, Keisuke Yamada, Yoshinobu Nakatani   +2 more
doaj   +1 more source