Results 101 to 110 of about 9,722 (211)

Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents a comprehensive spin-orbit torque (SOT)-based magnetic random access memory (MRAM) design at the 7 nm technology node, spanning from device-level characteristics to system-level power performance area (PPA).
Piyush Kumar, Da Eun Shim, Azad Naeemi
doaj   +1 more source

Characterisations and reliability of magnetic random access memories (MRAM)

, 2008
Les mémoires magnétiques à accès aléatoires (ou MRAM) sont récemment entrées en production. Ce travail de thèse vise à évaluer et caractériser les problèmes potentiels de fiabilité dus à l'introduction de la partie magnétique dans les mémoires MRAM.
openaire   +1 more source

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +1 more source

Magnetic random access memory (MRAM) cells with perpendicular anisotropy polariser

, 2011
Cette thèse est consacrée à l’intégration d’un polariseur à anisotropie perpendiculaire dans une jonction tunnel magnétique aux aimantations planaires. Par effet du transfert de spin venant du polariseur perpendiculaire, il est possible d’induire des oscillations de l’aimantation de la couche libre.
openaire   +1 more source

Domain-Specific STT-MRAM-Based In-Memory Computing: A Survey

IEEE Access
In recent years, the rapid growth of big data and the increasing demand for high-performance computing have fueled the development of novel computing architectures.
Alaba Yusuf, Tosiron Adegbija, Dhruv Gajaria   +2 more
doaj   +1 more source

Cryogenic-temperature grain-to-grain epitaxial growth of high-quality ultrathin CoFe layer on MgFeO tunnel barrier for high-performance magnetic tunnel junctions

NPG Asia Materials
One candidate for ultimate non-volatile memory with ultralow power consumption is voltage-controlled magneto-resistive random-access memory (VC-MRAM).
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki, Kay Yakushiji, Shingo Tamaru, Shinji Yuasa   +5 more
doaj   +1 more source

Manipulating transient SOT-MRAM switching dynamics for efficiency improvement and probabilistic switching. [PDF]

Sci Rep
Nallan S, Zhu JG.
europepmc   +1 more source

Editorial for the Topic on Magnetic Materials and Devices. [PDF]

Micromachines (Basel)
Sverdlov V.
europepmc   +1 more source

Multilevel Nanoarray Spin-Orbit Torque Device for Process-in-Memory Applications. [PDF]

Nano Lett
Koh D, Kim DJ, Kim T, Kang M, Viet DD, Hong H, Jeong JR, Park J, Park BG.   +8 more
europepmc   +1 more source

Quantitative separation of planar Nernst effects in harmonic Hall measurements of spin-orbit torques in Pt/Co/HfO/Ta multilayers. [PDF]

Sci Rep
Yun C, Jo Y, Kim M, Yu S, Park J, Yang S, Joo S, Rhie K, Lee K.   +8 more
europepmc   +1 more source